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SI3438DV PDF预览

SI3438DV

更新时间: 2024-11-06 06:11:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 141K
描述
N-Channel 40-V (D-S) MOSFET

SI3438DV 数据手册

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New Product  
Si3438DV  
Vishay Siliconix  
N-Channel 40-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
I
D (A)a  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
APPLICATIONS  
0.0355 at VGS = 10 V  
0.0425 at VGS = 4.5 V  
7.4  
6.7  
RoHS  
40  
5.3 nC  
COMPLIANT  
DC/DC Converter  
TSOP-6  
Top View  
D
D
D
S
1
2
3
6
D
(1, 2, 5, 6)  
3 mm  
D
G
5
4
Marking Code  
AW XXX  
Lot Traceability  
and Date Code  
G
(3)  
Part # Code  
2.85 mm  
(4)  
S
Ordering Information: Si3438DV-T1-E3 (Lead (Pb)-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
VDS  
Limit  
40  
20  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
T
T
T
C = 25 °C  
C = 70 °C  
A = 25 °C  
7.4  
5.8  
Continuous Drain Current (TJ = 150 °C)  
ID  
5.5b, c  
4.4b, c  
20  
2.9  
1.6b,c  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current  
T
C = 25 °C  
A = 25 °C  
Continuous Source-Drain Diode Current  
T
TC = 25 °C  
3.5  
T
C = 70 °C  
A = 25 °C  
2.2  
2b,c  
PD  
Maximum Power Dissipation  
W
T
1.25b,c  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Foot  
Symbol  
RthJA  
RthJF  
Typical  
50  
Maximum  
Unit  
t 5 s  
Steady State  
62.5  
35  
°C/W  
28  
Notes:  
a. Based on 25 °C.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. Maximum under Steady State conditions is 110 °C/W.  
Document Number: 68393  
S-81013-Rev. A, 05-May-08  
www.vishay.com  
1

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