Datasheet > SI3434-TP

SI3434-TP

更新时间： 2024-09-16 19:08:31

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	453K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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SI3434-TP 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.69	湿度敏感等级：	1
峰值回流温度（摄氏度）：	260	处于峰值回流温度下的最长时间：	10
Base Number Matches：	1

SI3434-TP 数据手册

M C C

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20736 Marilla Street Chatsworth

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Micro Commercial Components

SI3434

Features

N-Channel

Enhancement Mode

•

High dense cell design for extremely low R_DS(ON)

Rugged and reliable

Lead free product is acquired

SOT-23 Package

Field Effect Transistor

Marking Code: R34

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

Halogen free available upon request by adding suffix "-HF"

SOT-23

Maximum Ratings @ 25 C Unless Otherwise Specified

1.GATE

Symbol

V_DS

Parameter

Drain-source Voltage

Rating

5.0

Unit

2. SOURCE

I_D

I_DM

Drain Current-Continuous

3. DRAIN

Drain Current-Pulsed ^a

V_GS

Gate-source Voltageꢀ

R/W

ꢁ10

Thermal Resistance Junction to Ambient^b

417

T_J

Operating Junction Temperature

Storage Temperature

-55 to +150

T_STG

-55 to +150

DIMENSIONS

INCHES

MIN

.110

DIM

MAX

.120

.104

MIN

2.80

2.10

MAX

3.04

2.64

NOTE

Internal Block Diagram

.083

.047

.035

.070

.018

.0005

.035

.003

.015

.055

.041

.081

.024

.0039

.044

.007

.020

1.20

.89

1.78

.45

.013

.89

.085

.37

1.40

1.03

2.05

.60

.100

1.12

.180

.51

Suggested Solder

Pad Layout

.031

.800

.035

.900

.079

2.000

inches

.037

.950

.037

.950

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Revision: A

2014/12/08

12 3 4

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