Datasheet > SI2309CDS

SI2309CDS

更新时间： 2024-11-06 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	108K
描述
P-Channel 60-V (D-S) MOSFET

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SI2309CDS 数据手册

New Product

Si2309CDS

Vishay Siliconix

P-Channel 60-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free Option Available

TrenchFET^®Power MOSFET

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^d

•

0.345 at V_GS= - 10 V

0.450 at V_GS= - 4.5 V

- 1.6

- 1.4

- 60

2.7 nC

APPLICATIONS

Load Switch

•

TO-236

(SOT-23)

Top View

Si2309CDS (N9)*

* Marking Code

Ordering Information: Si2309CDS-T1-E3 (Lead (Pb)-free)

Si2309CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 60

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

- 1.6

- 1.3

Continuous Drain Current (T_J= 150 °C)^{a, b}

I_D

- 1.2^{a, b}

- 1.0^{a, b}

- 8

I_DM

I_AS

Pulsed Drain Current (10 µs Pulse Width)

Single Pulse Avalanche Current

- 5

L = 0.1 mH

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

- 1.4

I_S

Continuous Source-Drain Diode Current

- 0.9^{a, b}

1.7

_C= 70 °C

_A= 25 °C

1.1

P_D

Maximum Power Dissipation

1.0^{a, b}

0.67^{a, b}

- 55 to 150

260

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^c

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{a, c}

Symbol

Typical

Maximum

120

Unit

R_thJA

t ≤ 5 s

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Steady State

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. Maximum under Steady State conditions is 166 °C/W.

d. When T_C= 25 °C.

Document Number: 68980

S-82584-Rev. A, 27-Oct-08

www.vishay.com

12 3 4 5 6

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