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SI2309CDS PDF预览

SI2309CDS

更新时间: 2024-11-18 06:11:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 108K
描述
P-Channel 60-V (D-S) MOSFET

SI2309CDS 数据手册

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New Product  
Si2309CDS  
Vishay Siliconix  
P-Channel 60-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free Option Available  
TrenchFET® Power MOSFET  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)d  
0.345 at VGS = - 10 V  
0.450 at VGS = - 4.5 V  
- 1.6  
- 1.4  
- 60  
2.7 nC  
APPLICATIONS  
Load Switch  
TO-236  
(SOT-23)  
G
S
1
3
2
D
S
G
Top View  
Si2309CDS (N9)*  
* Marking Code  
D
Ordering Information: Si2309CDS-T1-E3 (Lead (Pb)-free)  
Si2309CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
- 60  
20  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
- 1.6  
- 1.3  
Continuous Drain Current (TJ = 150 °C)a, b  
ID  
- 1.2a, b  
- 1.0a, b  
- 8  
A
IDM  
IAS  
Pulsed Drain Current (10 µs Pulse Width)  
Single Pulse Avalanche Current  
- 5  
L = 0.1 mH  
TC = 25 °C  
TA = 25 °C  
TC = 25 °C  
- 1.4  
IS  
Continuous Source-Drain Diode Current  
- 0.9a, b  
1.7  
T
C = 70 °C  
A = 25 °C  
1.1  
PD  
W
Maximum Power Dissipation  
1.0a, b  
T
0.67a, b  
- 55 to 150  
260  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)c  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambienta, c  
Symbol  
Typical  
92  
Maximum  
120  
Unit  
RthJA  
t 5 s  
°C/W  
RthJF  
Maximum Junction-to-Foot (Drain)  
Steady State  
58  
73  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
b. t = 5 s.  
c. Maximum under Steady State conditions is 166 °C/W.  
d. When TC = 25 °C.  
Document Number: 68980  
S-82584-Rev. A, 27-Oct-08  
www.vishay.com  
1

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