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SI2309CDS-T1-E3 PDF预览

SI2309CDS-T1-E3

更新时间: 2024-11-20 06:11:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 108K
描述
P-Channel 60-V (D-S) MOSFET

SI2309CDS-T1-E3 技术参数

生命周期:Active零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:0.73配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):1.6 A
最大漏极电流 (ID):1.6 A最大漏源导通电阻:0.345 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.7 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI2309CDS-T1-E3 数据手册

 浏览型号SI2309CDS-T1-E3的Datasheet PDF文件第2页浏览型号SI2309CDS-T1-E3的Datasheet PDF文件第3页浏览型号SI2309CDS-T1-E3的Datasheet PDF文件第4页浏览型号SI2309CDS-T1-E3的Datasheet PDF文件第5页浏览型号SI2309CDS-T1-E3的Datasheet PDF文件第6页 
New Product  
Si2309CDS  
Vishay Siliconix  
P-Channel 60-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free Option Available  
TrenchFET® Power MOSFET  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)d  
0.345 at VGS = - 10 V  
0.450 at VGS = - 4.5 V  
- 1.6  
- 1.4  
- 60  
2.7 nC  
APPLICATIONS  
Load Switch  
TO-236  
(SOT-23)  
G
S
1
3
2
D
S
G
Top View  
Si2309CDS (N9)*  
* Marking Code  
D
Ordering Information: Si2309CDS-T1-E3 (Lead (Pb)-free)  
Si2309CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
- 60  
20  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
- 1.6  
- 1.3  
Continuous Drain Current (TJ = 150 °C)a, b  
ID  
- 1.2a, b  
- 1.0a, b  
- 8  
A
IDM  
IAS  
Pulsed Drain Current (10 µs Pulse Width)  
Single Pulse Avalanche Current  
- 5  
L = 0.1 mH  
TC = 25 °C  
TA = 25 °C  
TC = 25 °C  
- 1.4  
IS  
Continuous Source-Drain Diode Current  
- 0.9a, b  
1.7  
T
C = 70 °C  
A = 25 °C  
1.1  
PD  
W
Maximum Power Dissipation  
1.0a, b  
T
0.67a, b  
- 55 to 150  
260  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)c  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambienta, c  
Symbol  
Typical  
92  
Maximum  
120  
Unit  
RthJA  
t 5 s  
°C/W  
RthJF  
Maximum Junction-to-Foot (Drain)  
Steady State  
58  
73  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
b. t = 5 s.  
c. Maximum under Steady State conditions is 166 °C/W.  
d. When TC = 25 °C.  
Document Number: 68980  
S-82584-Rev. A, 27-Oct-08  
www.vishay.com  
1

SI2309CDS-T1-E3 替代型号

型号 品牌 替代类型 描述 数据表
SI2309CDS-T1-GE3 VISHAY

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P-Channel 60-V (D-S) MOSFET

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