5秒后页面跳转
PSMN7R0-60YS,115 PDF预览

PSMN7R0-60YS,115

更新时间: 2024-11-06 14:44:15
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
15页 224K
描述
PSMN7R0-60YS - N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET SOIC 4-Pin

PSMN7R0-60YS,115 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
针数:4Reach Compliance Code:not_compliant
风险等级:7.99Base Number Matches:1

PSMN7R0-60YS,115 数据手册

 浏览型号PSMN7R0-60YS,115的Datasheet PDF文件第2页浏览型号PSMN7R0-60YS,115的Datasheet PDF文件第3页浏览型号PSMN7R0-60YS,115的Datasheet PDF文件第4页浏览型号PSMN7R0-60YS,115的Datasheet PDF文件第5页浏览型号PSMN7R0-60YS,115的Datasheet PDF文件第6页浏览型号PSMN7R0-60YS,115的Datasheet PDF文件第7页 
PSMN7R0-60YS  
N-channel LFPAK 60 V 6.4 mstandard level MOSFET  
Rev. 02 — 30 March 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is  
designed and qualified for use in a wide range of industrial, communications and domestic  
equipment.  
1.2 Features and benefits  
„ Advanced TrenchMOS provides low  
„ Improved mechanical and thermal  
RDSon and low gate charge  
characteristics  
„ High efficiency gains in switching  
„ LFPAK provides maximum power  
power converters  
density in a Power SO8 package  
1.3 Applications  
„ DC-to-DC converters  
„ Lithium-ion battery protection  
„ Load switching  
„ Motor control  
„ Server power supplies  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
drain-source voltage Tj 25 °C; Tj 175 °C  
Min  
Typ  
Max Unit  
VDS  
ID  
-
-
-
-
60  
89  
V
A
drain current  
Tmb = 25 °C; VGS = 10 V;  
see Figure 1  
Ptot  
total power  
dissipation  
Tmb = 25 °C; see Figure 2  
-
-
-
117  
175  
W
Tj  
junction temperature  
-55  
°C  
Avalanche ruggedness  
EDS(AL)S non-repetitive  
drain-source  
VGS = 10 V; Tj(init) = 25 °C;  
ID = 89.1 A; Vsup 60 V;  
RGS = 50 ; unclamped  
-
-
143  
mJ  
avalanche energy  
Dynamic characteristics  
QGD  
gate-drain charge  
total gate charge  
VGS = 10 V; ID = 60 A;  
VDS = 30 V; see Figure 14  
and 15  
-
-
9.6  
45  
-
-
nC  
nC  
QG(tot)  
 
 
 
 
 

PSMN7R0-60YS,115 替代型号

型号 品牌 替代类型 描述 数据表
PSMN7R0-60YS NXP

类似代替

N-channel LFPAK 60 V 6.4 mΩ standard level MO

与PSMN7R0-60YS,115相关器件

型号 品牌 获取价格 描述 数据表
PSMN7R2-100YSF NEXPERIA

获取价格

NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 packageQualification
PSMN7R5-25YLC NXP

获取价格

N-channel 25 V 7.4 mΩ logic level MOSFET in L
PSMN7R5-25YLC,115 NXP

获取价格

PSMN7R5-25YLC - N-channel 25 V 7.4 mΩ logic l
PSMN7R5-30MLD NEXPERIA

获取价格

N-channel 30 V, 7.5 mΩ logic level MOSFET in
PSMN7R5-30YLD NEXPERIA

获取价格

N-channel 30 V, 7.5 mΩ logic level MOSFET in
PSMN7R5-60YL NEXPERIA

获取价格

N-channel 60 V, 7.5 mΩ logic level MOSFET in
PSMN7R6-100BSE NXP

获取价格

75A, 100V, 0.0076ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3/2
PSMN7R6-100BSE NEXPERIA

获取价格

N-channel 100 V 7.6 mΩ standard level MOSFET
PSMN7R6-60BS NXP

获取价格

92A, 60V, 0.0078ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3
PSMN7R6-60BS NEXPERIA

获取价格

N-channel 60 V 7.8 mΩ standard level MOSFET i