PBSS4160DS

更新时间： 2024-11-20 03:43:23

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管开关光电二极管
页数	文件大小	规格书
14页	151K
描述
60 V 1 A NPN/NPN low VCEsat (BISS) transistor

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PBSS4160DS 数据手册

PBSS4160DS

60 V, 1 A NPN/NPN low V_CEsat(BISS) transistor

Rev. 02 — 27 June 2005

Product data sheet

1. Product proﬁle

1.1 General description

NPN/NPN low V_CEsatBreakthrough in Small Signal (BISS) transistor pair in a SOT457

(SC-74) Surface Mounted Device (SMD) plastic package.

PNP complement: PBSS5160DS.

1.2 Features

■ Low collector-emitter saturation voltage V_CEsat

■ High collector current capability: I_Cand I_CM

■ High collector current gain (h_FE) at high I_C

■ High efﬁciency due to less heat generation

■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

■ Dual low power switches (e.g. motors, fans)

■ Automotive applications

1.4 Quick reference data

Table 1:

Symbol Parameter

V_CEOcollector-emitter voltage

I_C

Quick reference data

Conditions

Min

Typ

Max Unit

open base

[1]

[2]

collector current (DC)

peak collector current

I_CM

single pulse; t_p≤ 1 ms

R_CEsat

collector-emitter saturation I_C= 1 A; I_B= 100 mA

resistance

200

250

mΩ

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².

[2] Pulse test: t_p≤ 300 µs; δ ≤ 0.02.

12 3 4 5 6 7...14

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