PBSS4160PAN

更新时间： 2024-01-24 23:33:25

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
17页	276K
描述
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

PBSS4160PAN 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.64	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
端子面层：	Tin (Sn)	处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

PBSS4160PAN 数据手册

PBSS4130PAN

30 V, 1 A NPN/NPN low VCEsat (BISS) transistor

11 January 2013

Product data sheet

1. General description

NPN/NPN low V_CEsatBreakthrough In Small Signal (BISS) transistor in a leadless

medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4130PANP. PNP/PNP complement: PBSS5130PAP.

2. Features and benefits

Very low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High collector current gain h_FEat high I_C

Reduced Printed-Circuit Board (PCB) requirements

High energy efficiency due to less heat generation

AEC-Q101 qualified

•

3. Applications

Load switch

•

Battery-driven devices

Power management

Charging circuits

Power switches (e.g. motors, fans)

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

I_C

collector current

I_CM

peak collector current single pulse; t_p≤ 1 ms

Per transistor

R_CEsat

collector-emitter

I_C= 1 A; I_B= 0.1 A; pulsed; t_p≤ 300 µs;

δ ≤ 0.02 ; T_amb= 25 °C

190

mΩ

saturation resistance

Scan or click this QR code to view the latest information for this product

12 3 4 5 6 7...17

中文翻译

下载PDF

与PBSS4160PAN相关器件

型号	品牌	获取价格	描述	数据表
PBSS4160PAN_15	NXP	获取价格	60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
PBSS4160PANP	NXP	获取价格	60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
PBSS4160PANP	NEXPERIA	获取价格	60 V, 1 A NPN/PNP low VCEsat (BISS) transistorProduction
PBSS4160PANP-Q	NEXPERIA	获取价格	60 V, 1 A NPN/PNP low VCEsat transistorProduction
PBSS4160PANPS	NEXPERIA	获取价格	60 V, 1 A NPN/NPN low VCEsat (BISS) transistorProduction
PBSS4160PANPSX	ETC	获取价格	TRANS NPN/PNP 60V 1A 6HUSON
PBSS4160PANS	NEXPERIA	获取价格	60 V, 1 A NPN/NPN low VCEsat (BISS) transistorProduction
PBSS4160QA	NXP	获取价格	60 V, 1 A NPN low VCEsat (BISS) transistor
PBSS4160QA	NEXPERIA	获取价格	60 V, 1 A NPN low VCEsat (BISS) transistorProduction
PBSS4160QA-Q	NEXPERIA	获取价格	60 V, 1 A NPN low VCEsat transistorProduction