Datasheet > PBSS4160V

PBSS4160V

更新时间： 2024-11-22 11:11:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	246K
描述
60 V, 1 A NPN low VCEsat (BISS) transistorProduction

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中文翻译

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技术参数
数据手册

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PBSS4160V 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.67
Is Samacsys：	N	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
端子面层：	Tin (Sn)	处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

PBSS4160V 数据手册

PBSS4160V

60 V, 1 A NPN low VCEsat (BISS) transistor

28 December 2022

Product data sheet

1. General description

Low V_CEsat(BISS) NPN transistor in a SOT666 ultra small and flat lead Surface-Mounted Device

(SMD) plastic package.

PNP complement: PBSS5160V

2. Features and benefits

•

Low collector-emitter saturation voltage V_CEsat

•

High collector current capability I_Cand I_CM

High efficiency, reduces heat generation

Reduces printed-circuit board area required

Cost effective replacement for medium power transistor BCP55 and BCX55

3. Applications

•

Major application segments:

•

Telecom infrastructure

Industrial

•

Power management:

•

DC-to-DC conversion

Supply line switching

Peripheral driver:

•

Driver in low supply voltage applications (e.g. lamps and LEDs)

Inductive load driver (e.g. relays, buzzers and motors)

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_C

collector current

[1]

I_CM

peak collector current t = 1 ms or limited by T_j(max)

R_CEsat

collector-emitter

I_C= 1 A; I_B= 100 mA; T_amb= 25 °C

200

250

mΩ

saturation resistance

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².

12 3 4 5 6 7...12

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