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PBSS4240T PDF预览

PBSS4240T

更新时间: 2023-09-03 20:37:14
品牌 Logo 应用领域
安世 - NEXPERIA 开关光电二极管晶体管
页数 文件大小 规格书
8页 180K
描述
40 V; 2 A NPN low VCEsat transistorProduction

PBSS4240T 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.7
Is Samacsys:N最大集电极电流 (IC):2 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):150JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):230 MHz
Base Number Matches:1

PBSS4240T 数据手册

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PBSS4240T  
40 V; 2 A NPN low VCEsat transistor  
13 May 2022  
Product data sheet  
1. General description  
NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic  
package.  
PNP complement: PBSS5240T  
2. Features and benefits  
Low collector-emitter saturation voltage  
High current capability  
Improved device reliability due to reduced heat generation  
AEC-Q101 qualified  
3. Applications  
Supply line switching circuits  
Battery management applications  
DC/DC converter applications  
Strobe flash units  
Heavy duty battery powered equipment (motor and lamp drivers)  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
40  
V
ICM  
peak collector current single pulse; tp ≤ 1 ms  
-
-
-
3
A
RCEsat  
collector-emitter  
IC = 500 mA; IB = 50 mA; pulsed; tp ≤  
140  
200  
mΩ  
saturation resistance  
300 µs; δ ≤ 0.02; Tamb = 25 °C  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
base  
Simplified outline  
Graphic symbol  
3
B
E
C
C
2
emitter  
B
3
collector  
E
1
2
sym123  
SOT23  
 
 
 
 
 

PBSS4240T 替代型号

型号 品牌 替代类型 描述 数据表
PBSS4240T,215 NXP

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