Datasheet > PBSS4240X

PBSS4240X

更新时间： 2023-09-03 20:29:15

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	670K
描述
40 V, 2 A NPN low VCEsat (BISS) transistorProduction

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PBSS4240X 数据手册

PBSS4240X

40 V, 2 A NPN low VCEsat (BISS) transistor

15 October 2012

Product data sheet

1. Product profile

1.1 General description

NPN low V_CEsatBreakthrough In Small Signal (BISS) transistor in a medium power and

flat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement:

PBSS5240X.

1.2 Features and benefits

Low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High efficiency due to less heat generation

•

1.3 Applications

DC-to-DC conversion

Supply line switching

Battery charger

LCD backlighting

Driver in low supply voltage applications (e.g. lamps and LEDs)

Inductive load driver (e.g. relays, buzzers and motors)

•

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_C

collector current

I_CM

peak collector current

R_CEsat

collector-emitter

I_C= 1 A; I_B= 100 mA; pulsed;

260

mΩ

saturation resistance

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

I_CRM

repetitive peak

collector current

t_p≤ 20 ms; δ ≤ 0.33 ; pulsed

2.5

12 3 4 5 6 7...12

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