Datasheet > PBSS4260QA

PBSS4260QA

更新时间： 2023-09-03 20:27:16

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
17页	726K
描述
60 V, 2 A NPN low VCEsat (BISS) transistorProduction

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PBSS4260QA 数据手册

PBSS4260QA

60 V, 2 A NPN low VCEsat (BISS) transistor

28 August 2013

Product data sheet

1. General description

NPN low V_CEsatBreakthrough In Small Signal (BISS) transistor in a leadless ultra small

DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

and solderable side pads.

PNP complement: PBSS5260QA.

2. Features and benefits

Very low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High collector current gain h_FEat high I_C

High energy efficiency due to less heat generation

Reduced Printed-Circuit Board (PCB) area requirements

Solderable side pads

•

AEC-Q101 qualified

3. Applications

Loadswitch

•

Battery-driven devices

Power management

Charging circuits

Power switches (e.g. motors, fans)

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_C

collector current

I_CM

peak collector current single pulse; t_p≤ 1 ms

R_CEsat

collector-emitter

I_C= 1 A; I_B= 0.1 A; pulsed; t_p≤ 300 µs;

δ ≤ 0.02 ; T_amb= 25 °C

130

180

mΩ

saturation resistance

12 3 4 5 6 7...17

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