Datasheet > PBSS4260PANPS

PBSS4260PANPS

更新时间： 2023-09-03 20:38:29

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
21页	788K
描述
60 V, 2 A NPN/PNP low VCEsat (BISS) double transistorProduction

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PBSS4260PANPS 数据手册

PBSS4260PANPS

60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor

4 February 2016

Product data sheet

1. General description

NPN/PNP low V_CEsatBreakthrough In Small Signal (BISS) double transistor in a leadless

medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic

package with visible and solderable side pads.

NPN/NPN complement: PBSS4260PANS

PNP/PNP complement: PBSS5260PAPS

2. Features and benefits

Very low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

•

High collector current gain h_FEat high I_C

Reduced Printed-Circuit Board (PCB) requirements

Exposed heat sink for excellent thermal and electrical conductivity

High energy efficiency due to less heat generation

Suitable for Automatic Optical Inspection (AOI) of solder joints

AEC-Q101 qualified

3. Applications

Load switch

•

Battery-driven devices

Power management

Charging circuits

LED lighting

Power switches (e.g. motors, fans)

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor, for the PNP transistor with negative polarity

V_CEO

collector-emitter

voltage

open base

I_C

collector current

I_CM

peak collector current single pulse; t_p≤ 1 ms

12 3 4 5 6 7...21

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