Datasheet > PBSS4232DD

PBSS4232DD

更新时间： 2023-12-06 20:06:16

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	551K
描述
TO-252AA

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中文翻译

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PBSS4232DD 数据手册

PBSS4232DD

NPN Low Vce(sat) Transistor

TO-252AA

32V

Voltage

Current

Features

 Silicon NPN epitaxial type

 Low Vce(sat) 0.8V(max)@Ic/Ib= 2A / 200mA

 High collector current capability

 Excellent DC current gain characteristics

 Lead free in comply with EU RoHS 2.0

 Green molding compound as per IEC61249 Standard

Mechanical Data

 Case: TO-252AA Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0104 ounces, 0.297 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

LIMIT

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

I_CP

Base Current (DC)

I_B

0.2

Collector Power Dissipation

P_D

2.0

^oC

^oC/W

Operating Junction and Storage Temperature Range

Thermal Resistance from Junction to Ambient ^{(Note )}

Note: Mounted on FR4 with 2oz. PCB at 1 inch square copper pad.

T_J,T_STG

-55~150

R_θJA

62.5

February 4,2020

PBSS4232DD-REV.00

Page 1

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