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PBSS4230QA PDF预览

PBSS4230QA

更新时间: 2024-02-22 17:15:46
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
17页 251K
描述
30 V, 2 A NPN low VCEsat (BISS) transistor

PBSS4230QA 数据手册

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3
-
PBSS4230QA  
30 V, 2 A NPN low VCEsat (BISS) transistor  
D
0
1
0
1
N
F
D
23 August 2013  
Product data sheet  
1. General description  
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small  
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible  
and solderable side pads.  
PNP complement: PBSS5230QA.  
2. Features and benefits  
Very low collector-emitter saturation voltage VCEsat  
High collector current capability IC and ICM  
High collector current gain hFE at high IC  
High energy efficiency due to less heat generation  
Reduced Printed-Circuit Board (PCB) area requirements  
Solderable side pads  
AEC-Q101 qualified  
3. Applications  
Loadswitch  
Battery-driven devices  
Power management  
Charging circuits  
Power switches (e.g. motors, fans)  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
30  
V
IC  
collector current  
-
-
-
-
2
A
ICM  
peak collector current single pulse; tp ≤ 1 ms  
-
3
A
RCEsat  
collector-emitter  
IC = 1 A; IB = 100 mA; pulsed;  
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C  
135  
180  
mΩ  
saturation resistance  
Scan or click this QR code to view the latest information for this product  
 
 
 
 

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