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PBSS4160V PDF预览

PBSS4160V

更新时间: 2024-02-21 08:12:58
品牌 Logo 应用领域
恩智浦 - NXP 晶体小信号双极晶体管
页数 文件大小 规格书
14页 101K
描述
60 V, 1 A NPN low VCEsat (BISS) transistor

PBSS4160V 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.64JESD-609代码:e3
湿度敏感等级:1峰值回流温度(摄氏度):260
端子面层:Tin (Sn)处于峰值回流温度下的最长时间:30
Base Number Matches:1

PBSS4160V 数据手册

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PBSS4160V  
60 V, 1 A NPN low VCEsat (BISS) transistor  
Rev. 02 — 31 January 2005  
Product data sheet  
1. Product profile  
1.1 General description  
Low VCEsat (BISS) NPN transistor in a SOT666 plastic package.  
PNP complement: PBSS5160V.  
1.2 Features  
Low collector-emitter saturation voltage VCEsat  
High collector current capability IC and ICM  
High efficiency, reduces heat generation  
Reduces printed-circuit board area required  
Cost effective replacement for medium power transistor BCP55 and BCX55  
1.3 Applications  
Major application segments:  
Automotive  
Telecom infrastructure  
Industrial  
Power management:  
DC-to-DC conversion  
Supply line switching  
Peripheral driver  
Driver in low supply voltage applications (e.g. lamps and LEDs)  
Inductive load driver (e.g. relays, buzzers and motors)  
1.4 Quick reference data  
Table 1:  
Symbol  
VCEO  
IC  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
collector-emitter voltage  
collector current (DC)  
peak collector current  
equivalent on-resistance  
open base  
-
-
-
-
-
-
-
60  
1
V
A
A
[1]  
[2]  
ICM  
t = 1 ms or limited by Tj(max)  
IC = 1 A; IB = 100 mA  
2
RCEsat  
200 250 m  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad.  
[2] Pulse test: tp 300 µs; δ ≤ 0.02.  

PBSS4160V 替代型号

型号 品牌 替代类型 描述 数据表
PBSS4160V,115 NXP

完全替代

PBSS4160V - 60 V, 1 A NPN low VCEsat (BISS) transistor SOT 6-Pin

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