Datasheet > PBSS4160PANP

PBSS4160PANP

更新时间： 2024-11-22 11:11:43

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
21页	332K
描述
60 V, 1 A NPN/PNP low VCEsat (BISS) transistorProduction

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技术参数
数据手册

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PBSS4160PANP 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.4	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
端子面层：	Tin (Sn)	处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

PBSS4160PANP 数据手册

PBSS4160PANP

60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

20 December 2017

Product data sheet

1. General description

NPN/PNP low V_CEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power

DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP.

2. Features and benefits

•

Very low collector-emitter saturation voltage V_CEsat

•

High collector current capability I_Cand I_CM

High collector current gain h_FEat high I_C

Reduced Printed-Circuit Board (PCB) requirements

High efficiency due to less heat generation

AEC-Q101 qualified

3. Applications

•

Load switch

Battery-driven devices

Power management

Charging circuits

Power switches (e.g. motors, fans)

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity

V_CEO

collector-emitter

voltage

open base

I_C

collector current

I_CM

peak collector current single pulse; t_p≤ 1 ms

1.5

TR1 (NPN)

R_CEsat

collector-emitter

saturation resistance

I_C= 0.5 A; I_B= 50 mA; t_p≤ 300 µs;

pulsed; δ ≤ 0.02 ; T_amb= 25 °C

240

360

mΩ

TR2 (PNP)

R_CEsat

collector-emitter

saturation resistance

I_C= -0.5 A; I_B= -50 mA; t_p≤ 300 µs;

pulsed; δ ≤ 0.02 ; T_amb= 25 °C

12 3 4 5 6 7...21

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