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PBSS4160U PDF预览

PBSS4160U

更新时间: 2024-11-18 10:17:59
品牌 Logo 应用领域
恩智浦 - NXP 晶体小信号双极晶体管PC
页数 文件大小 规格书
14页 203K
描述
60 V, 1 A NPN low VCEsat (BISS) transistor

PBSS4160U 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.27Is Samacsys:N
最大集电极电流 (IC):1 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):250
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.415 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):220 MHz
Base Number Matches:1

PBSS4160U 数据手册

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PBSS4160U  
60 V, 1 A NPN low VCEsat (BISS) transistor  
Rev. 03 — 11 December 2009  
Product data sheet  
1. Product profile  
1.1 General description  
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70)  
Surface Mounted Device (SMD) plastic package.  
PNP complement: PBSS5160U.  
1.2 Features  
„ Low collector-emitter saturation voltage VCEsat  
„ High collector current capability: IC and ICM  
„ High collector current gain (hFE) at high IC  
„ High efficiency due to less heat generation  
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors  
1.3 Applications  
„ High voltage DC-to-DC conversion  
„ High voltage MOSFET gate driving  
„ High voltage motor control  
„ High voltage power switches (e.g. motors, fans)  
„ Automotive applications  
1.4 Quick reference data  
Table 1.  
Symbol Parameter  
VCEO collector-emitter voltage  
IC  
Quick reference data  
Conditions  
Min  
Typ  
Max Unit  
open base  
-
-
-
-
-
60  
1
V
[1]  
[2]  
collector current (DC)  
peak collector current  
-
A
ICM  
single pulse; tp 1 ms  
-
2
A
RCEsat  
collector-emitter saturation IC = 1 A; IB = 100 mA  
resistance  
230  
280  
mΩ  
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.  
[2] Pulse test: tp 300 μs; δ ≤ 0.02.  

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