Datasheet > PBSS4160T-Q

PBSS4160T-Q

更新时间： 2024-11-19 11:11:23

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	252K
描述
60 V, 1 A NPN low VCEsat (BISS) transistorProduction

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PBSS4160T-Q 数据手册

PBSS4160T-Q

60 V, 1 A NPN low VCEsat (BISS) transistor

15 December 2021

Product data sheet

1. General description

NPN low V_CEsattransistor in a small SOT23 plastic package. PNP complement: PBSS5160T-Q.

2. Features and benefits

•

Low collector-emitter saturation voltage V_CEsat

•

High collector current capability I_Cand I_CM

High efficiency, reduces heat generation

Reduces printed-circuit board area required

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Major application segments:

•

Automotive 42 V power

Telecom infrastructure

Industrial.

•

Power management:

•

DC-to-DC conversion

Supply line switching.

Peripheral driver

•

Driver in low supply voltage applications (e.g. lamps and LEDs)

Inductive load driver (e.g. relays, buzzers and motors).

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_C

collector current

[1]

I_CM

peak collector current or limited by T_j(max); t_p= 1 ms

R_CEsat

collector-emitter

saturation resistance

I_C= 1 A; I_B= 100 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

200

250

mΩ

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².

12 3 4 5 6 7...12

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