Datasheet > PBSS4160QA-Q

PBSS4160QA-Q

更新时间： 2024-11-19 11:12:55

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	291K
描述
60 V, 1 A NPN low VCEsat transistorProduction

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PBSS4160QA-Q 数据手册

PBSS4160QA-Q

60 V, 1 A NPN low VCEsat transistor

9 March 2023

Product data sheet

1. General description

NPN low V_CEsattransistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted

Device (SMD) plastic package with visible and solderable side pads.

2. Features and benefits

•

Very low collector-emitter saturation voltage V_CEsat

•

High collector current capability I_Cand I_CM

High collector current gain h_FEat high I_C

High energy efficiency due to less heat generation

Reduced Printed-Circuit Board (PCB) area requirements

Solderable side pads

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Loadswitch

Battery-driven devices

Power management

Charging circuits

Power switches (e.g. motors, fans)

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_C

collector current

I_CM

peak collector current single pulse; t_p≤ 1 ms

1.5

235

R_CEsat

collector-emitter

saturation resistance

I_C= 1 A; I_B= 0.1 A; pulsed; t_p≤ 300 µs;

δ ≤ 0.02; T_amb= 25 °C

170

mΩ

12 3 4 5 6 7...14

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