Datasheet > PBSS4160DS-Q

PBSS4160DS-Q

更新时间： 2024-11-19 17:01:23

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	308K
描述
60 V, 1 A NPN/NPN low VCEsat transistorProduction

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PBSS4160DS-Q 数据手册

PBSS4160DS-Q

60 V, 1 A NPN/NPN low VCEsat transistor

21 September 2023

Product data sheet

1. General description

NPN/NPN low V_CEsattransistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic

package.

PNP/PNP complement: PBSS5160DS-Q

2. Features and benefits

•

Low collector-emitter saturation voltage V_CEsat

•

High collector current capability: I_Cand I_CM

High collector current gain (h_FE) at high I_C

High efficiency due to less heat generation

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Dual low power switches (e.g. motors, fans)

Automotive applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

I_C

collector current

[1]

I_CM

peak collector current single pulse; t_p≤ 1 ms

R_CEsat

collector-emitter

saturation resistance

I_C= 1 A; I_B= 100 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

200

250

mΩ

[1] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.

12 3 4 5 6 7...14

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