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PBSS4160DS,115 PDF预览

PBSS4160DS,115

更新时间: 2024-11-20 15:47:31
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
14页 194K
描述
PBSS4160DS - 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor TSOP 6-Pin

PBSS4160DS,115 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:TSOP包装说明:PLASTIC, SMD, SC-74, 6 PIN
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.38
Is Samacsys:N最大集电极电流 (IC):1 A
集电极-发射极最大电压:60 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):250JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.7 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):220 MHzBase Number Matches:1

PBSS4160DS,115 数据手册

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PBSS4160DS  
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor  
Rev. 04 — 11 December 2009  
Product data sheet  
1. Product profile  
1.1 General description  
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457  
(SC-74) Surface Mounted Device (SMD) plastic package.  
PNP/PNP complement: PBSS5160DS.  
1.2 Features  
„ Low collector-emitter saturation voltage VCEsat  
„ High collector current capability: IC and ICM  
„ High collector current gain (hFE) at high IC  
„ High efficiency due to less heat generation  
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors  
1.3 Applications  
„ Dual low power switches (e.g. motors, fans)  
„ Automotive applications  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Per transistor  
Conditions  
Min  
Typ  
Max Unit  
VCEO  
IC  
collector-emitter voltage  
open base  
-
-
-
-
-
-
60  
1
V
A
A
[1]  
[2]  
collector current  
ICM  
peak collector current  
single pulse;  
tp 1 ms  
2
RCEsat  
collector-emitter saturation  
resistance  
IC = 1 A;  
IB = 100 mA  
-
200  
250  
mΩ  
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.  
[2] Pulse test: tp 300 μs; δ ≤ 0.02.  
 
 
 
 
 
 
 

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