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NTMS4916N

更新时间： 2024-11-09 10:30:15
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安森美 - ONSEMI /
页数 文件大小 规格书
5页 109K
描述
Power MOSFET 30 V, 11.6 A, N?Channel, SO?8 Low RDS(on) to Minimize Conduction Losses

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NTMS4916N 数据手册

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NTMS4916N  
Power MOSFET  
30 V, 11.6 A, N−Channel, SO−8  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• Optimized for 5 V, 12 V Gate Drives  
http://onsemi.com  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
9 mW @ 10 V  
Applications  
30 V  
11.6 A  
12 mW @ 4.5 V  
• DC−DC Converters  
• Printers  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
N−Channel  
J
Parameter  
Drain−to−Source Voltage  
Symbol Value Unit  
D
V
30  
20  
V
V
A
DSS  
Gate−to−Source Voltage  
V
GS  
Continuous Drain  
Steady  
State  
I
D
T = 25°C  
9.4  
7.5  
1.30  
A
Current R  
(Note 1)  
q
G
JA  
T = 70°C  
A
Power Dissipation R  
(Note 1)  
Steady  
State  
T = 25°C  
A
P
W
A
q
D
JA  
JA  
S
Continuous Drain  
Steady  
State  
I
D
T = 25°C  
A
7.8  
6.2  
Current R  
(Note 2)  
MARKING DIAGRAM/  
PIN ASSIGNMENT  
q
JA  
T = 70°C  
A
Power Dissipation R  
(Note 2)  
T = 25°C  
A
P
I
0.89  
W
A
q
D
1
8
Source  
Source  
Source  
Gate  
Drain  
Drain  
Drain  
Drain  
1
Continuous Drain  
Steady  
State  
T = 25°C  
A
11.6  
9.3  
D
SO−8  
CASE 751  
STYLE 12  
Current R , t v 10 s  
q
JA  
T = 70°C  
A
(Note 1)  
Top View  
Power Dissipation  
Steady  
State  
T = 25°C  
A
P
D
1.98  
W
R
, t v 10 s(Note 1)  
q
JA  
4916N = Device Code  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
A
I
DM  
145  
A
p
A
= Assembly Location  
Y
= Year  
= Work Week  
= Pb−Free Package  
Operating Junction and Storage Temperature  
T ,  
stg  
−55 to  
°C  
J
T
150  
WW  
G
Source Current (Body Diode)  
I
S
2.5  
A
(Note: Microdot may be in either location)  
Single Pulse Drain−to−Source Avalanche Energy  
E
AS  
40.5  
mJ  
(T = 25°C, V = 30 V, V = 10 V,  
J
DD  
GS  
I = 9 A , L = 1.0 mH, R = 25 W)  
ORDERING INFORMATION  
L
pk  
G
†
Lead Temperature for Soldering Purposes  
T
260  
°C  
L
Device  
Package  
Shipping  
2500/Tape & Reel  
(1/8″ from case for 10 s)  
NTMS4916NR2G  
SO−8  
(Pb−Free)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol Value Unit  
°C/W  
Junction−to−Ambient – Steady State (Note 1)  
Junction−to−Ambient – t v 10 s (Note 1)  
Junction−to−Foot (Drain)  
R
R
96  
63  
q
q
JA  
JA  
R
R
24.5  
141  
q
JF  
JA  
Junction−to−Ambient – Steady State (Note 2)  
q
1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu.  
2. Surfacemounted on FR4 board using the minimum recommended pad size.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
April, 2010 − Rev. 0  
NTMS4916N/D  
 
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