Datasheet > NTMS4916NR2G

NTMS4916NR2G

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	399K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:11.6A;Vgs(th)(V):±20;漏源导通电阻:9mΩ@10V;漏源导通电阻:12mΩ@4.5V

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NTMS4916NR2G 数据手册

NTMS4916

UMW

30V N-Channel MOSFET

Features

l VDS (V) =30V

ID= 11.6 A

(V = 10V)

RDS(ON) ＜ 9 m

Ω(V

=10V)

RDS(ON) ＜ 12 m

Ω(V

=4.5V)

• Low R_DS(on)to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• Optimized for 5 V, 12 V Gate Drives

• These Devices are Pb−Free, Halogen Free/BFR Free and

are RoHS Compliant

N−Channel

MAXIMUM RATINGS _{(T = 25°C unless otherwise stated)}

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

DSS

Gate−to−Source Voltage

Continuous Drain

Current R (Note 1)

Steady

State

T = 25°C

9.4

T = 70°C

7.5

Power Dissipation R

(Note 1)

Steady

State

T = 25°C

1.30

Continuous Drain

Steady

State

T = 25°C

7.8

6.2

Current R

(Note 2)

T = 70°C

Power Dissipation R

(Note 2)

T = 25°C

0.89

Continuous Drain

Steady

State

T = 25°C

11.6

9.3

Current R , t v 10 s

T = 70°C

(Note 1)

Power Dissipation

Steady

State

T = 25°C

1.98

, t v 10 s(Note 1)

Pulsed Drain Current

T = 25°C, t = 10 ms

145

Operating Junction and Storage Temperature

T ,

stg

−55 to

150

°C

Source Current (Body Diode)

2.5

Single Pulse Drain−to−Source Avalanche Energy

40.5

(T = 25°C, V = 30 V, V = 10 V,

I = 9 A , L = 1.0 mH, R = 25 W)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t v 10 s (Note 1)

Junction−to−Foot (Drain)

°C/W

24.5

141

Junction−to−Ambient – Steady State (Note 2)

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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