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NTE2341(NPN) PDF预览

NTE2341(NPN)

更新时间: 2024-11-01 22:13:27
品牌 Logo 应用领域
NTE 晶体驱动器晶体管达林顿晶体管
页数 文件大小 规格书
2页 26K
描述
Silicon Complementary Transistors Darlington Driver

NTE2341(NPN) 数据手册

 浏览型号NTE2341(NPN)的Datasheet PDF文件第2页 
NTE2341(NPN) & NTE2342 (PNP)  
Silicon Complementary Transistors  
Darlington Driver  
Description:  
The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a  
TO92 type package designed for general purpose, low frequency applications and as relay drivers.  
Absolute Maximum Ratings:  
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V  
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V  
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A  
Total Power Dissipation, Ptot  
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW  
TA = +25°C, Note 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W  
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C  
Maximum Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 156K/W  
Note 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W  
Note 1. Mounted on a PC Board, max lead length 4mm, mounting pad for collector lead min 10mm  
x 10mm.  
Electrical Characteristics: (TJ = +25°C unless otherwise specified)  
Parameter  
Collector–EmitterBreakdown Voltage V(BR)CEO IC = 50mA, IB = 0  
Collector–BaseBreakdown Voltage V(BR)CBO IC = 100µA, IB = 0  
Emitter–Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0  
Symbol  
Test Conditions  
Min Typ Max Unit  
80  
100  
5
V
V
V
Collector Cutoff Current  
ICEO  
ICBO  
IEBO  
hFE  
VCE = 40V, IB = 0  
500  
100  
100  
nA  
nA  
nA  
VCB = 100V, IE = 0  
VCE = 4V, IC = 0  
Emitter Cutoff Current  
DC Current Gain  
IC = 150mA, VCE = 10V  
IC = 500mA, VCE = 10V  
1000  
2000  

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