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NTE2355 PDF预览

NTE2355

更新时间: 2024-11-19 22:54:19
品牌 Logo 应用领域
NTE 晶体电阻器小信号双极晶体管开关
页数 文件大小 规格书
2页 27K
描述
Silicon Complementary Transistors Digital w/2 Built-In 10k Bias Resistors

NTE2355 技术参数

生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:2.14
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):50JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

NTE2355 数据手册

 浏览型号NTE2355的Datasheet PDF文件第2页 
NTE2355 (NPN) & NTE2356 (PNP)  
Silicon Complementary Transistors  
Digital w/2 Built–In 10k Bias Resistors  
Features:  
D Built–In Bias Resistor (R1 = 10k, R2 = 10k)  
D Small–Sized Package (TO92 type)  
Applications:  
D Switching Circuit  
D Inverter  
D Interface Circuit  
D Driver  
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)  
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V  
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V  
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V  
Collector Current, IC  
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA  
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA  
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW  
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +160°C  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
Symbol  
Test Conditions  
= 40V, I = 0  
Min  
Typ Max Unit  
Collector Cutoff Current  
I
V
CB  
V
CE  
V
EB  
V
CE  
V
CE  
0.1  
0.5  
330  
µA  
µA  
µA  
CBO  
E
I
= 40V, I = 0  
CEO  
B
Emitter Cutoff Current  
DC Current Gain  
I
= 5V, I = 0  
170  
50  
250  
EBO  
C
h
FE  
= 5V, I = 10mA  
C
Gain Band–width Product  
NTE2355  
f
T
= 10V, I = 5mA  
C
250  
200  
MHz  
MHz  
NTE2356  
Output Capacitance  
NTE2355  
C
ob  
V
CB  
= 10V, f = 1MHz  
3.7  
5.5  
pF  
pF  
NTE2356  

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