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NTE2365 PDF预览

NTE2365

更新时间: 2024-10-31 22:54:19
品牌 Logo 应用领域
NTE 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
2页 25K
描述
Silicon NPN Transistor High Voltage Horizontal Deflection Output

NTE2365 技术参数

生命周期:ActiveReach Compliance Code:unknown
ECCN代码:EAR99风险等级:2.12
Is Samacsys:N其他特性:HIGH RELIABILITY
最大集电极电流 (IC):12 A集电极-发射极最大电压:800 V
配置:SINGLE最小直流电流增益 (hFE):4
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):180 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

NTE2365 数据手册

 浏览型号NTE2365的Datasheet PDF文件第2页 
NTE2365  
Silicon NPN Transistor  
High Voltage Horizontal Deflection Output  
Features:  
D High Speed: tf = 100ns typ  
D High Reliability  
D High Breakdown Voltage: VCBO = 1500V  
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)  
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V  
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V  
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V  
Collector Current, IC  
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A  
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A  
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180W  
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
Symbol  
ICBO  
Test Conditions  
VCB = 800V, IE = 0  
VCE = 1500V, RBE = 0  
Min Typ Max Unit  
Collector Cutoff Current  
10  
µA  
ICES  
1.0 mA  
Collector Sustaining Voltage  
Emitter Cutoff Current  
VCEO(sus) IC = 100mA, IB = 0  
IEBO VEB = 4V, IC = 0  
800  
V
1.0 mA  
Collector–Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 2.5A  
5
V
V
Base–Emitter Saturation Voltage  
DC Current Gain  
VBE(sat) IC = 10A, IB = 2.5A  
hFE(1) VCE = 5V, IC = 1A  
hFE(2) VCE = 5V, IC = 10A  
1.5  
30  
8
8
4
Storage Time  
Fall Time  
tstg  
tf  
3.0  
0.2  
µs  
µs  
IC = 8A, IB1 = 1.6A, IB2 = –3.2A  

NTE2365 替代型号

型号 品牌 替代类型 描述 数据表
NTE2354 NTE

类似代替

Silicon NPN Transistor High Voltage Horizontal Output for High Definition CRT
NTE2348 NTE

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Silicon NPN Transistor High Voltage, High Speed Switch
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功能相似

中等功率 NPN 双极功率晶体管

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