5秒后页面跳转
NTE2368 PDF预览

NTE2368

更新时间: 2024-11-20 04:36:03
品牌 Logo 应用领域
NTE 晶体电阻器小信号双极晶体管开关
页数 文件大小 规格书
2页 27K
描述
Silicon Complementary Transistors Digital w/2 Built-In 4.7k Bias Resistors

NTE2368 技术参数

生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.77
Is Samacsys:N其他特性:DIGITAL, BUILT IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):30
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

NTE2368 数据手册

 浏览型号NTE2368的Datasheet PDF文件第2页 
NTE2367 (NPN) & NTE2368 (PNP)  
Silicon Complementary Transistors  
Digital w/2 Built–In 4.7k Bias Resistors  
Features:  
D Built–In Bias Resistor (R1 = 4.7k, R2 = 4.7k)  
D Small–Sized Package (TO92 type)  
Applications:  
D Switching Circuit  
D Inverter  
D Interface Circuit  
D Driver  
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)  
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V  
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V  
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V  
Collector Current, IC  
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA  
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA  
Collector Dissipation, PC  
NTE2367 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW  
NTE2368 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW  
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +160°C  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
Symbol  
Test Conditions  
= 40V, I = 0  
Min  
Typ Max Unit  
Collector Cutoff Current  
I
V
V
V
V
V
0.1  
0.5  
330  
µA  
µA  
µA  
CBO  
CB  
CE  
EB  
CE  
CE  
E
I
= 40V, I = 0  
CEO  
B
Emitter Cutoff Current  
DC Current Gain  
I
= 5V, I = 0  
170  
30  
250  
EBO  
C
h
FE  
= 5V, I = 10mA  
C
Current Gain–Bandwidth Product  
NTE2367  
f
T
= 10V, I = 5mA  
C
250  
200  
3.0  
MHz  
MHz  
pF  
NTE2368  
Output Capacitance  
C
ob  
V
CB  
= 10V, f = 1MHz  

与NTE2368相关器件

型号 品牌 获取价格 描述 数据表
NTE2369 NTE

获取价格

Silicon Complementary Transistors Digital w/2 Built-In 4.7k Bias Resistors
NTE237 ETC

获取价格

TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-39VAR
NTE2370 NTE

获取价格

Silicon Complementary Transistors Digital w/2 Built-In 4.7k Bias Resistors
NTE2371 NTE

获取价格

MOSFET P-Ch, Enhancement Mode High Speed Switch
NTE2372 NTE

获取价格

MOSFET P-Ch, Enhancement Mode High Speed Switch
NTE2373 NTE

获取价格

MOSFET P-Ch, Enhancement Mode High Speed Switch
NTE2374 NTE

获取价格

MOSFET N-Ch, Enhancement Mode High Speed Switch
NTE2375 NTE

获取价格

MOSFET N-Ch, Enhancement Mode High Speed Switch
NTE2376 NTE

获取价格

MOSFET N-Ch, Enhancement Mode High Speed Switch
NTE2377 NTE

获取价格

MOSFET N-Channel, Enhancement Mode, High Speed