是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | LEAD FREE, CASE 369AA-01, DPAK-3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.17 | Is Samacsys: | N |
雪崩能效等级(Eas): | 20 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 25 V |
最大漏极电流 (ID): | 7.8 A | 最大漏源导通电阻: | 0.014 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | NOT SPECIFIED |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 180 A | 认证状态: | COMMERCIAL |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTD5406N | ONSEMI |
获取价格 |
Power MOSFET 40 V, 70 A, Single N−Channel, DPAK | |
NTD5406NG | ONSEMI |
获取价格 |
Power MOSFET 40 V, 70 A, Single N−Channel, DPAK | |
NTD5406NT4G | ONSEMI |
获取价格 |
Power MOSFET 40 V, 70 A, Single N−Channel, DPAK | |
NTD5407N | ONSEMI |
获取价格 |
Power MOSFET 40 V, 38 A, Single N−Channel, DPAK | |
NTD5407NG | ONSEMI |
获取价格 |
Power MOSFET 40 V, 38 A, Single N−Channel, DPAK | |
NTD5407NT4G | ONSEMI |
获取价格 |
Power MOSFET 40 V, 38 A, Single N−Channel, DPAK | |
NTD5413N | ONSEMI |
获取价格 |
Power MOSFET 30 Amps, 60 Volts Single N−Channel DPAK | |
NTD5413NT4G | ONSEMI |
获取价格 |
Power MOSFET 30 Amps, 60 Volts Single N−Channel DPAK | |
NTD5414N | ONSEMI |
获取价格 |
Power MOSFET 24 Amps, 60 Volts Single N−Channel DPAK | |
NTD5414NT4G | ONSEMI |
获取价格 |
Power MOSFET 24 Amps, 60 Volts Single N−Channel DPAK |