5秒后页面跳转
NTD5802N PDF预览

NTD5802N

更新时间: 2024-11-18 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 126K
描述
Power MOSFET 40 V, Single N−Channel, 101 A DPAK

NTD5802N 数据手册

 浏览型号NTD5802N的Datasheet PDF文件第2页浏览型号NTD5802N的Datasheet PDF文件第3页浏览型号NTD5802N的Datasheet PDF文件第4页浏览型号NTD5802N的Datasheet PDF文件第5页浏览型号NTD5802N的Datasheet PDF文件第6页 
NTD5802N  
Power MOSFET  
40 V, Single NChannel, 101 A DPAK  
Features  
Low R  
to Minimize Conduction Losses  
DS(on)  
Low Capacitance to Minimize Driver Losses  
Optimized Gate Charge to Minimize Switching Losses  
MSL 1/260°C  
http://onsemi.com  
V
R
I
D
(BR)DSS  
DS(on)  
AEC Q101 Qualified  
4.4 mW @ 10 V  
7.8 mW @ 5.0 V  
101 A  
50 A  
100% Avalanche Tested  
40 V  
These are PbFree Devices  
Applications  
D
CPU Power Delivery  
DCDC Converters  
Motor Driver  
NChannel  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
40  
Unit  
V
S
V
DSS  
GatetoSource Voltage  
V
"20  
101  
V
GS  
4
Continuous Drain Cur-  
rent (R ) (Note 1)  
T
T
T
= 25°C  
= 85°C  
= 25°C  
I
A
C
C
C
D
q
JC  
78  
2
1
Power Dissipation  
(R ) (Note 1)  
P
93.75  
W
A
D
3
q
JC  
Steady  
State  
CASE 369C  
DPAK  
(Bent Lead)  
STYLE 2  
Continuous Drain Cur-  
rent (R ) (Note 1)  
T = 25°C  
A
I
16.4  
12.7  
2.5  
D
q
JA  
T = 85°C  
A
Power Dissipation  
(R ) (Note 1)  
T = 25°C  
A
P
W
D
q
JA  
MARKING DIAGRAMS  
& PIN ASSIGNMENT  
Pulsed Drain Current  
t =10ms T = 25°C  
I
300  
45  
A
A
p
A
DM  
I
DmaxPkg  
Current Limited by Package  
T = 25°C  
A
4
Operating Junction and Storage Temperature  
T , T  
55 to  
175  
°C  
J
stg  
Drain  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
50  
6.0  
240  
A
S
dV/dt  
V/ns  
mJ  
Single Pulse DraintoSource Avalanche En-  
E
AS  
ergy (V = 32 V, V = 10 V,  
DD  
GS  
2
L = 0.3 mH, I  
= 40 A, R = 25 W)  
L(pk)  
G
Drain  
1
3
Gate Source  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
°C  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Y
WW  
= Year  
= Work Week  
5802N = Device Code  
= PbFree Package  
G
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
April, 2009 Rev. 4  
NTD5802N/D  

与NTD5802N相关器件

型号 品牌 获取价格 描述 数据表
NTD5802NT4G ONSEMI

获取价格

Power MOSFET 40 V, Single N−Channel, 101 A
NTD5803N ONSEMI

获取价格

Power MOSFET 40 V, 76 A, Single N−Channel, DPAK
NTD5803NG ONSEMI

获取价格

Power MOSFET 40 V, 76 A, Single N−Channel, DPAK
NTD5803NT4G ONSEMI

获取价格

Power MOSFET 40 V, 76 A, Single N−Channel, DPAK
NTD5804N ONSEMI

获取价格

Power MOSFET 40 V, 69 A, Single N−Channel, DPAK
NTD5804NG ONSEMI

获取价格

Power MOSFET 40 V, 69 A, Single N−Channel, DPAK
NTD5804NT4G ONSEMI

获取价格

Power MOSFET 40 V, 69 A, Single N−Channel, DPAK
NTD5805N ONSEMI

获取价格

Power MOSFET 40 V, 51 A, Single N−Channel, DPAK
NTD5805N_12 ONSEMI

获取价格

Power MOSFET 40 V, 51 A, Single N.Channel, DPAK
NTD5805NG ONSEMI

获取价格

Power MOSFET 40 V, 51 A, Single N−Channel, DPAK