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NTD5803N

更新时间： 2024-11-18 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 106K
描述
Power MOSFET 40 V, 76 A, Single N−Channel, DPAK

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NTD5803N 数据手册

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NTD5803N  
Power MOSFET  
40 V, 76 A, Single N−Channel, DPAK  
Features  
• Low R  
DS(on)  
• High Current Capability  
• Avalanche Energy Specified  
• These are Pb−Free Devices  
http://onsemi.com  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
Applications  
10.1 mW @ 5.0 V  
7.2 mW @ 10 V  
54 A  
76 A  
40 V  
• CCFL Backlight  
• DC Motor Control  
• Class D Amplifier  
D
• Power Supply Secondary Side Synchronous Rectification  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
G
V
DSS  
Gate−to−Source Voltage − Continuous  
Gate−to−Source Voltage  
V
"20  
"30  
V
GS  
S
N−CHANNEL MOSFET  
V
GS  
V
− Non−Repetitive (t < 10 mS)  
p
4
Continuous Drain  
T
= 25°C  
= 100°C  
= 25°C  
I
76  
54  
83  
A
C
D
4
Current (R  
(Note 1)  
)
q
JC  
Steady  
State  
T
C
2
1
Power Dissipation  
(R ) (Note 1)  
T
C
P
W
D
3
1
q
JC  
2
3
DPAK  
Pulsed Drain Current  
t = 10 ms  
I
228  
A
p
DM  
DPAK  
CASE 369C  
(Surface Mount)  
STYLE 2  
CASE 369D  
(Straight Lead)  
STYLE 2  
Operating Junction and Storage Temperature  
T , T  
−55 to  
175  
°C  
J
stg  
Source Current (Body Diode)  
I
76  
A
S
Single Pulse Drain−to−Source Avalanche  
E
240  
mJ  
AS  
MARKING DIAGRAMS  
& PIN ASSIGNMENT  
Energy (V = 50 V, V = 10 V, R = 25 W,  
DD  
GS  
G
I
= 40 A, L = 0.3 mH)  
L(pk)  
4
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
Drain  
L
4
Drain  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
THERMAL RESISTANCE MAXIMUM RATINGS  
2
Drain  
1
3
Parameter  
Symbol  
Value  
Unit  
Gate Source  
1
2
3
Junction−to−Case (Drain)  
R
1.8  
64  
°C/W  
q
JC  
Gate Drain Source  
Junction−to−Ambient − Steady State (Note 1)  
R
q
JA  
Y
WW  
= Year  
= Work Week  
5803N = Device Code  
1. Surface−mounted on FR4 board using 1 in sq pad size  
(Cu area = 1.127 in sq [1 oz] including traces.  
G
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
December, 2008 − Rev. 0  
NTD5803N/D  
 
123456

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