5秒后页面跳转
捷配首页

Datasheet > NTD5803N
NTD5803N PDF预览

NTD5803N

更新时间： 2024-11-09 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 106K
描述
Power MOSFET 40 V, 76 A, Single N−Channel, DPAK

阅读下载

中文翻译

获取价格

NTD5803N 数据手册

 浏览型号NTD5803N的Datasheet PDF文件第2页浏览型号NTD5803N的Datasheet PDF文件第3页浏览型号NTD5803N的Datasheet PDF文件第4页浏览型号NTD5803N的Datasheet PDF文件第5页浏览型号NTD5803N的Datasheet PDF文件第6页 
NTD5803N  
Power MOSFET  
40 V, 76 A, Single N−Channel, DPAK  
Features  
• Low R  
DS(on)  
• High Current Capability  
• Avalanche Energy Specified  
• These are Pb−Free Devices  
http://onsemi.com  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
Applications  
10.1 mW @ 5.0 V  
7.2 mW @ 10 V  
54 A  
76 A  
40 V  
• CCFL Backlight  
• DC Motor Control  
• Class D Amplifier  
D
• Power Supply Secondary Side Synchronous Rectification  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
G
V
DSS  
Gate−to−Source Voltage − Continuous  
Gate−to−Source Voltage  
V
"20  
"30  
V
GS  
S
N−CHANNEL MOSFET  
V
GS  
V
− Non−Repetitive (t < 10 mS)  
p
4
Continuous Drain  
T
= 25°C  
= 100°C  
= 25°C  
I
76  
54  
83  
A
C
D
4
Current (R  
(Note 1)  
)
q
JC  
Steady  
State  
T
C
2
1
Power Dissipation  
(R ) (Note 1)  
T
C
P
W
D
3
1
q
JC  
2
3
DPAK  
Pulsed Drain Current  
t = 10 ms  
I
228  
A
p
DM  
DPAK  
CASE 369C  
(Surface Mount)  
STYLE 2  
CASE 369D  
(Straight Lead)  
STYLE 2  
Operating Junction and Storage Temperature  
T , T  
−55 to  
175  
°C  
J
stg  
Source Current (Body Diode)  
I
76  
A
S
Single Pulse Drain−to−Source Avalanche  
E
240  
mJ  
AS  
MARKING DIAGRAMS  
& PIN ASSIGNMENT  
Energy (V = 50 V, V = 10 V, R = 25 W,  
DD  
GS  
G
I
= 40 A, L = 0.3 mH)  
L(pk)  
4
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
Drain  
L
4
Drain  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
THERMAL RESISTANCE MAXIMUM RATINGS  
2
Drain  
1
3
Parameter  
Symbol  
Value  
Unit  
Gate Source  
1
2
3
Junction−to−Case (Drain)  
R
1.8  
64  
°C/W  
q
JC  
Gate Drain Source  
Junction−to−Ambient − Steady State (Note 1)  
R
q
JA  
Y
WW  
= Year  
= Work Week  
5803N = Device Code  
1. Surface−mounted on FR4 board using 1 in sq pad size  
(Cu area = 1.127 in sq [1 oz] including traces.  
G
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
December, 2008 − Rev. 0  
NTD5803N/D  
 
123456

中文翻译

下载PDF

与NTD5803N相关器件

型号 品牌 获取价格 描述 数据表
NTD5803NG ONSEMI

获取价格

 		Power MOSFET 40 V, 76 A, Single N−Channel, DPAK
NTD5803NT4G ONSEMI

获取价格

 		Power MOSFET 40 V, 76 A, Single N−Channel, DPAK
NTD5804N ONSEMI

获取价格

 		Power MOSFET 40 V, 69 A, Single N−Channel, DPAK
NTD5804NG ONSEMI

获取价格

 		Power MOSFET 40 V, 69 A, Single N−Channel, DPAK
NTD5804NT4G ONSEMI

获取价格

 		Power MOSFET 40 V, 69 A, Single N−Channel, DPAK
NTD5805N ONSEMI

获取价格

 		Power MOSFET 40 V, 51 A, Single N−Channel, DPAK
NTD5805N_12 ONSEMI

获取价格

 		Power MOSFET 40 V, 51 A, Single N.Channel, DPAK
NTD5805NG ONSEMI

获取价格

 		Power MOSFET 40 V, 51 A, Single N−Channel, DPAK
NTD5805NT4G ONSEMI

获取价格

 		Power MOSFET 40 V, 51 A, Single N−Channel, DPAK
NTD5806N ONSEMI

获取价格

 		Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK

与NTD5803N相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证