5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> NTD5806N
NTD5806N PDF预览

NTD5806N

更新时间： 2024-11-21 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 131K
描述
Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK

阅读下载

中文翻译

获取价格

NTD5806N 数据手册

 浏览型号NTD5806N的Datasheet PDF文件第2页浏览型号NTD5806N的Datasheet PDF文件第3页浏览型号NTD5806N的Datasheet PDF文件第4页浏览型号NTD5806N的Datasheet PDF文件第5页浏览型号NTD5806N的Datasheet PDF文件第6页浏览型号NTD5806N的Datasheet PDF文件第7页 
NTD5806N  
Power MOSFET  
40 V, 33 A, Single N−Channel, DPAK/IPAK  
Features  
• Low R  
DS(on)  
• High Current Capability  
• Avalanche Energy Specified  
• These are Pb−Free Devices  
http://onsemi.com  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
Applications  
26 mW @ 4.5 V  
19 mW @ 10 V  
40 V  
33 A  
• CCFL Backlight  
• DC Motor Control  
• Power Supply Secondary Side Synchronous Rectification  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
G
Gate−to−Source Voltage − Continuous  
Gate−to−Source Voltage  
V
"20  
"30  
V
GS  
V
GS  
V
S
− Non−Repetitive (t < 10 mS)  
p
N−CHANNEL MOSFET  
Continuous Drain  
T
= 25°C  
= 100°C  
= 25°C  
I
33  
23  
40  
A
C
D
4
Current (R  
(Note 1)  
)
q
JC  
Steady  
State  
T
C
4
Power Dissipation  
(R ) (Note 1)  
T
C
P
W
D
2
1
q
JC  
3
1
Pulsed Drain Current  
t = 10 ms  
I
67  
A
2
p
DM  
3
DPAK  
Operating Junction and Storage Temperature  
T , T  
−55 to  
175  
°C  
J
stg  
IPAK  
CASE 369C  
(Surface Mount)  
STYLE 2  
CASE 369D  
(Straight Lead  
DPAK)  
Source Current (Body Diode)  
I
33  
39  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (V = 50 V, V = 10 V, R = 25 W,  
DD  
GS  
G
MARKING DIAGRAMS  
& PIN ASSIGNMENT  
I
= 28 A, L = 0.1 mH, V = 40 V)  
L(pk)  
DS  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
4
Drain  
4
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Drain  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
2
Drain  
1
3
Junction−to−Case (Drain)  
R
3.7  
°C/W  
q
JC  
Gate Source  
1
2
3
Junction−to−Ambient − Steady State (Note 1)  
R
57.5  
q
JA  
Gate Drain Source  
1. Surface−mounted on FR4 board using 1 in sq pad size  
Y
WW  
= Year  
= Work Week  
(Cu area = 1.127 in sq [1 oz] including traces.  
5806N = Device Code  
G
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
February, 2010 − Rev. 3  
NTD5806N/D  
 
1234567

中文翻译

下载PDF

与NTD5806N相关器件

型号 品牌 获取价格 描述 数据表
NTD5806NG ONSEMI

获取价格

 		Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK
NTD5806NT4G ONSEMI

获取价格

 		Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK
NTD5807N ONSEMI

获取价格

 		Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK
NTD5807NG ONSEMI

获取价格

 		Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK
NTD5807NT4G ONSEMI

获取价格

 		Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK
NTD5862N ONSEMI

获取价格

 		N-Channel Power MOSFET
NTD5862N-1G ONSEMI

获取价格

 		N-Channel Power MOSFET
NTD5862NT4G ONSEMI

获取价格

 		N-Channel Power MOSFET 60 V, 98 A, 5.7 m
NTD5865 ONSEMI

获取价格

 		N-Channel Power MOSFET
NTD5865N ONSEMI

获取价格

 		N-Channel Power MOSFET 60 V, 38 A, 18 m

与NTD5806N相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证