5秒后页面跳转
NTD5C648NLT4G PDF预览

NTD5C648NLT4G

更新时间: 2023-09-03 20:38:22
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 230K
描述
单 N 沟道,功率 MOSFET,60V,91A,4.1mΩ

NTD5C648NLT4G 数据手册

 浏览型号NTD5C648NLT4G的Datasheet PDF文件第2页浏览型号NTD5C648NLT4G的Datasheet PDF文件第3页浏览型号NTD5C648NLT4G的Datasheet PDF文件第4页浏览型号NTD5C648NLT4G的Datasheet PDF文件第5页浏览型号NTD5C648NLT4G的Datasheet PDF文件第6页浏览型号NTD5C648NLT4G的Datasheet PDF文件第7页 
NTD5C648NL  
MOSFET – Power, Single,  
N-Channel  
60 V, 4.1 mW, 91 A  
Features  
Low R  
www.onsemi.com  
to Minimize Conduction Losses  
DS(on)  
Low Q and Capacitance to Minimize Driver Losses  
G
V
R
I
D
(BR)DSS  
DS(on)  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
4.1 mW @ 10 V  
5.7 mW @ 4.5 V  
Compliant  
60 V  
91 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
D
Parameter  
DraintoSource Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
GatetoSource Voltage  
V
"20  
91  
V
GS  
Continuous Drain Cur-  
T
= 25°C  
= 100°C  
= 25°C  
= 100°C  
= 25°C  
I
A
C
D
G
rent R  
(Notes 1 & 3)  
q
JC  
T
C
64  
Steady  
State  
Power Dissipation R  
(Note 1)  
T
C
P
76  
W
A
q
D
JC  
S
NCHANNEL MOSFET  
T
C
38  
Continuous Drain Cur-  
T
A
I
22  
D
rent R  
3)  
(Notes 1, 2 &  
4
q
JA  
T
A
= 100°C  
16  
Steady  
State  
Power Dissipation R  
(Notes 1 & 2)  
T
A
= 25°C  
P
4.4  
2.2  
550  
W
q
D
2
1
JA  
3
T
A
= 100°C  
Pulsed Drain Current  
T
A
= 25°C, t = 10 ms  
I
A
p
DM  
DPAK  
CASE 369C  
STYLE 2  
Operating Junction and Storage Temperature  
T , T  
55 to  
175  
°C  
J
stg  
Source Current (Body Diode)  
I
S
85  
A
MARKING DIAGRAM  
& PIN ASSIGNMENT  
Single Pulse DraintoSource Avalanche  
E
AS  
223  
mJ  
Energy (I  
= 7.0 A)  
L(pk)  
4
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
°C  
Drain  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
2
Parameter  
Symbol  
Value  
Unit  
Drain  
1
3
JunctiontoCase (Drain) (Note 1)  
R
2.0  
34  
°C/W  
Gate Source  
q
JC  
JunctiontoAmbient Steady State (Note 2)  
R
q
JA  
A
Y
WW  
= Assembly Location  
= Year  
= Work Week  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
2
5C648L = Device Code  
G
= PbFree Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
May, 2019Rev. 0  
NTD5C648NL/D  
 

与NTD5C648NLT4G相关器件

型号 品牌 获取价格 描述 数据表
NTD5C668NLT4G ONSEMI

获取价格

单 N 沟道,逻辑电平,功率 MOSFET,60V,48A,9.3mΩ
NTD5C684NLT4G ONSEMI

获取价格

Single N-Channel Logic Level Power MOSFET 60V
NTD5C688NLT4G ONSEMI

获取价格

单 N 沟道,逻辑电平,功率 MOSFET,60V,17A,27.4mΩ
NTD5N50 ONSEMI

获取价格

5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
NTD5N50 MOTOROLA

获取价格

5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
NTD5N50 ROCHESTER

获取价格

5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
NTD5N50/D ETC

获取价格

Power MOSFET 5 Amps, 500 Volts
NTD5N50-1 ONSEMI

获取价格

5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
NTD5N50T4 MOTOROLA

获取价格

5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
NTD5N50T4 ROCHESTER

获取价格

5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3