Datasheet > NTD5C446NT4G

NTD5C446NT4G

更新时间： 2023-09-03 20:32:20

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	230K
描述
单 N 沟道，功率 MOSFET，40V，110A，3.2mΩ

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NTD5C446NT4G 数据手册

NTD5C446N

MOSFET – Power, Single,

N-Channel

40 V, 3.5 mW, 110 A

Features

• Low R

www.onsemi.com

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

(BR)DSS

DS(on)

Compliant

40 V

3.5 mW @ 10 V

110 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

"20

110

Continuous Drain Cur-

= 25°C

= 100°C

= 25°C

rent R

(Notes 1 & 3)

Steady

State

Power Dissipation R

(Note 1)

= 100°C

N−CHANNEL MOSFET

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2 & 3)

Steady

State

Power Dissipation R

(Notes 1 & 2)

T = 25°C

4.3

2.1

620

T = 100°C

DPAK

Pulsed Drain Current

T = 25°C, t = 10 ms

CASE 369C

STYLE 2

Operating Junction and Storage Temperature

T , T

−55 to

175

°C

stg

Source Current (Body Diode)

MARKING DIAGRAM

& PIN ASSIGNMENT

Single Pulse Drain−to−Source Avalanche

214

Energy (I

= 11 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Drain

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

2.3

Unit

Drain

Gate Source

Junction−to−Case (Drain) (Note 1)

Junction−to−Ambient − Steady State (Note 2)

°C/W

= Assembly Location

= Year

= Work Week

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

5C446N= Device Code

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

= Pb−Free Package

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Publication Order Number:

May, 2019 − Rev. 0

NTD5C446N/D

12 3 4 5 6 7

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与NTD5C446NT4G相关器件

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NTD5C464NT4G	ONSEMI	获取价格	N 沟道，功率 MOSFET，40 V，59 A，5.8 mΩ
NTD5C632NLT4G	ONSEMI	获取价格	单 N 沟道，逻辑电平，功率 MOSFET，60V，155A，2.5mΩ
NTD5C648NLT4G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，60V，91A，4.1mΩ
NTD5C668NLT4G	ONSEMI	获取价格	单 N 沟道，逻辑电平，功率 MOSFET，60V，48A，9.3mΩ
NTD5C684NLT4G	ONSEMI	获取价格	Single N-Channel Logic Level Power MOSFET 60V
NTD5C688NLT4G	ONSEMI	获取价格	单 N 沟道，逻辑电平，功率 MOSFET，60V，17A，27.4mΩ
NTD5N50	ONSEMI	获取价格	5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
NTD5N50	MOTOROLA	获取价格	5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
NTD5N50	ROCHESTER	获取价格	5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
NTD5N50/D	ETC	获取价格	Power MOSFET 5 Amps， 500 Volts

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