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NTD5867NL-1G PDF预览

NTD5867NL-1G

更新时间: 2024-01-05 16:31:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
7页 135K
描述
N-Channel Power MOSFET 60 V, 20 A, 39 m

NTD5867NL-1G 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:IN-LINE, R-PSIP-T3针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:6.76Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):18 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):20 A
最大漏极电流 (ID):20 A最大漏源导通电阻:0.05 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL功耗环境最大值:36 W
最大功率耗散 (Abs):36 W最大脉冲漏极电流 (IDM):76 A
认证状态:Not Qualified表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON最大关闭时间(toff):20.6 ns
最大开启时间(吨):19.1 nsBase Number Matches:1

NTD5867NL-1G 数据手册

 浏览型号NTD5867NL-1G的Datasheet PDF文件第2页浏览型号NTD5867NL-1G的Datasheet PDF文件第3页浏览型号NTD5867NL-1G的Datasheet PDF文件第4页浏览型号NTD5867NL-1G的Datasheet PDF文件第5页浏览型号NTD5867NL-1G的Datasheet PDF文件第6页浏览型号NTD5867NL-1G的Datasheet PDF文件第7页 
NTD5867NL  
N-Channel Power MOSFET  
60 V, 20 A, 39 mW  
Features  
Low R  
DS(on)  
High Current Capability  
http://onsemi.com  
100% Avalanche Tested  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
V
R
MAX  
I MAX  
D
Compliant  
(BR)DSS  
DS(on)  
39 mW @ 10 V  
50 mW @ 4.5 V  
20 A  
18 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
60 V  
Parameter  
DraintoSource Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
D
GatetoSource Voltage Continuous  
V
"20  
"30  
V
GS  
GS  
GatetoSource Voltage  
V
V
NonRepetitive (t < 10 ms)  
p
Continuous Drain  
T
= 25°C  
= 100°C  
= 25°C  
I
20  
13  
36  
A
C
D
Current (R  
)
G
q
JC  
Steady  
State  
T
C
Power Dissipation  
(R  
T
C
P
W
D
)
S
q
JC  
NCHANNEL MOSFET  
Pulsed Drain Current  
t = 10 ms  
p
I
76  
A
DM  
Operating Junction and Storage Temperature  
T , T  
55 to  
150  
°C  
4
J
stg  
4
Source Current (Body Diode)  
I
20  
18  
A
S
2
Single Pulse DraintoSource Avalanche  
Energy (V = 50 V, V = 10 V, R = 25 W,  
E
AS  
mJ  
1
3
1
DD  
GS  
G
2
I
= 19 A, L = 0.1 mH, T = 25°C)  
L(pk)  
J
3
DPAK  
IPAK  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
°C  
CASE 369AA  
(Surface Mount)  
STYLE 2  
CASE 369D  
(Straight Lead)  
STYLE 2  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
MARKING DIAGRAMS  
& PIN ASSIGNMENT  
THERMAL RESISTANCE MAXIMUM RATINGS  
4
Parameter  
Symbol  
Value  
Unit  
Drain  
4
Drain  
JunctiontoCase (Drain)  
R
3.5  
45  
°C/W  
q
JC  
JunctiontoAmbient Steady State (Note 1)  
R
q
JA  
1. Surfacemounted on FR4 board using 1 in sq pad size  
(Cu area = 1.127 in sq [2 oz] including traces.  
2
Drain  
1
3
Gate Source  
1
2
3
Gate Drain Source  
Y
WW  
= Year  
= Work Week  
5867NL = Device Code  
G
= PbFree Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
March, 2010 Rev. 0  
NTD5867NL/D  
 

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