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NTD5865N-1G

更新时间: 2024-11-21 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
7页 104K
描述
N-Channel Power MOSFET 60 V, 38 A, 18 m

NTD5865N-1G 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 369D-01, IPAK-3针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.28
Is Samacsys:N雪崩能效等级(Eas):36 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):38 A
最大漏源导通电阻:0.018 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):137 A
认证状态:Not Qualified表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NTD5865N-1G 数据手册

 浏览型号NTD5865N-1G的Datasheet PDF文件第2页浏览型号NTD5865N-1G的Datasheet PDF文件第3页浏览型号NTD5865N-1G的Datasheet PDF文件第4页浏览型号NTD5865N-1G的Datasheet PDF文件第5页浏览型号NTD5865N-1G的Datasheet PDF文件第6页浏览型号NTD5865N-1G的Datasheet PDF文件第7页 
NTD5865N  
N-Channel Power MOSFET  
60 V, 38 A, 18 mW  
Features  
Low Gate Charge  
Fast Switching  
http://onsemi.com  
High Current Capability  
100% Avalanche Tested  
V
R
MAX  
I MAX  
D
These Devices are PbFree, Halogen Free and are RoHS Compliant  
(BR)DSS  
DS(on)  
60 V  
18 mW @ 10 V  
38 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
60  
Unit  
V
D
V
DSS  
GatetoSource Voltage Continuous  
V
"20  
"30  
V
GS  
GS  
GatetoSource Voltage  
V
V
NonRepetitive (t < 10 ms)  
p
G
Continuous Drain  
T
= 25°C  
= 100°C  
= 25°C  
I
38  
24  
52  
A
C
D
Current (R  
)
q
JC  
Steady  
State  
T
C
S
NCHANNEL MOSFET  
Power Dissipation  
(R  
T
C
P
W
D
)
q
JC  
4
Pulsed Drain Current  
t = 10 ms  
I
137  
A
p
DM  
4
Operating Junction and Storage Temperature  
T , T  
J
55 to  
150  
°C  
stg  
2
1
Source Current (Body Diode)  
I
38  
36  
A
mJ  
A
S
1
2
3
Single Pulse DraintoSource  
Avalanche Energy  
L = 0.1 mH  
E
3
AS  
AS  
DPAK  
IPAK  
CASE 369C  
(Surface Mount)  
STYLE 2  
I
27  
CASE 369D  
(Straight Lead)  
STYLE 2  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
260  
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
MARKING DIAGRAMS  
& PIN ASSIGNMENT  
4
Drain  
4
THERMAL RESISTANCE MAXIMUM RATINGS  
Drain  
Parameter  
Symbol  
Value  
Unit  
JunctiontoCase (Drain)  
R
2.4  
42  
°C/W  
q
JC  
JunctiontoAmbient Steady State (Note 1)  
R
q
JA  
1. Surfacemounted on FR4 board using 1 in sq pad size  
(Cu area = 1.127 in sq [2 oz] including traces.  
2
Drain  
1
3
Gate Source  
1
2
3
Gate Drain Source  
Y
WW  
= Year  
= Work Week  
5865N = Device Code  
G
= PbFree Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
May, 2010 Rev. 0  
NTD5865N/D  
 

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