Datasheet > NTD5N50

NTD5N50

更新时间： 2024-02-27 07:55:59

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		高压开关脉冲晶体管
页数	文件大小	规格书
4页	73K
描述
5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3

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中文翻译

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技术参数
数据手册
替代型号

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NTD5N50 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	风险等级：	5.71
雪崩能效等级（Eas）：	125 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	500 V
最大漏极电流 (ID)：	5 A	最大漏源导通电阻：	1.7 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PSSO-G2
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	18 A
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

NTD5N50 数据手册

Preferred Device

N–Channel Enhancement–Mode

Silicon Gate

http://onsemi.com

This advanced TMOS E–FET is designed to withstand high energy

in the avalanche and commutation modes. This new energy efficient

design also offers a drain–to–source diode with a fast recovery time.

Designed for low voltage, high speed switching applications in power

supplies, converters and PWM motor controls. These devices are

particularly well suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer additional

safety margin against unexpected voltage transients.

TMOS POWER FET

5 AMPERES

500 VOLTS

_DS(on)= 1.7 Ω

N–Channel

New Features of TMOS 7

• Ultra Low On–Resistance Provides Higher Efficiency

• Reduced Gate Charge

Features Common to TMOS 7 and TMOS E–FETS

• Avalanche Energy Specified

• Diode Characterized for Use in Bridge Circuits

• I

and V

Specified at Elevated Temperature

DSS

DS(on)

• Industry Standard DPAK Surface Mount Package

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain–Source Voltage

Symbol

Value

Unit

DSS

500

Vdc

Drain–Gate Voltage (R = 1.0 MΩ)

DGR

Gate–Source Voltage

— Continuous

CASE 369A

DPAK

— Non–Repetitive (t 10 ms)

GSM

Drain — Continuous

— Continuous @ 100°C

— Single Pulse (t 10 µs)

5.0

3.4

Adc

STYLE 2

PIN ASSIGNMENT

Total Power Dissipation

Derate above 25°C

Total Power Dissipation @ T = 25°C

when mounted with the minimum

0.77

1.75

Watts

W/°C

Gate

Drain

Source

recommended pad size

Drain

Operating and Storage Temperature

Range

T , T

–55 to

150

°C

stg

Single Drain–to–Source Avalanche

125

Energy — Starting T = 25°C

(V = 100 Vdc, V = 10 Vdc,

ORDERING INFORMATION

I = 5 A, L = 10 mH, R = 25 Ω)

Device

Package

DPAK

Shipping

75 Units/Rail

Thermal Resistance

°C/W

— Junction–to–Case

— Junction–to–Ambient

1.30

100

71.4

NTD5N50

NTD5N50T4

(1)

DPAK

2500 Tape & Reel

Maximum Lead Temperature for Soldering

260

°C

Purposes, 1/8″ from case for 10 seconds

(1) When surface mounted to an FR4 board using the minimum recommended

pad size.

Preferred devices are recommended choices for future use

and best overall value.

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

Semiconductor Components Industries, LLC, 2000

Publication Order Number:

June, 2000 – Rev. 0

NTD5N50/D

12 3 4

中文翻译

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NTD5N50 替代型号

型号	品牌	替代类型	描述	数据表
NTD5N50T4	ONSEMI	功能相似	5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
NTD5N50	ONSEMI	功能相似	5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
FQI5N50	FAIRCHILD	功能相似	500V N-Channel MOSFET

与NTD5N50相关器件

型号	品牌	获取价格	描述	数据表
NTD5N50/D	ETC	获取价格	Power MOSFET 5 Amps， 500 Volts
NTD5N50-1	ONSEMI	获取价格	5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
NTD5N50T4	MOTOROLA	获取价格	5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
NTD5N50T4	ROCHESTER	获取价格	5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
NTD5N50T4	ONSEMI	获取价格	5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
NTD5P06V	ONSEMI	获取价格	Power MOSFET 5 Amps, 60 Volts P−Channel DPAK
NTD5P06V-1	ONSEMI	获取价格	Power MOSFET 5 Amps, 60 Volts P−Channel DPAK
NTD5P06VT4	ONSEMI	获取价格	Power MOSFET 5 Amps, 60 Volts P−Channel DPAK
NTD60	EDI	获取价格	HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
NTD600N80S3Z	ONSEMI	获取价格	MOSFET – Power, N-Channel, SUPERFET® III, 800

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