生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | 风险等级: | 5.71 |
雪崩能效等级(Eas): | 125 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (ID): | 5 A | 最大漏源导通电阻: | 1.7 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 18 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NTD5N50T4 | ONSEMI |
功能相似 ![]() |
5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 |
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NTD5N50 | ONSEMI |
功能相似 ![]() |
5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 |
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FQI5N50 | FAIRCHILD |
功能相似 ![]() |
500V N-Channel MOSFET |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTD5N50/D | ETC |
获取价格 |
Power MOSFET 5 Amps, 500 Volts |
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NTD5N50-1 | ONSEMI |
获取价格 |
5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 |
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NTD5N50T4 | MOTOROLA |
获取价格 |
5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 |
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NTD5N50T4 | ROCHESTER |
获取价格 |
5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 |
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NTD5N50T4 | ONSEMI |
获取价格 |
5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 |
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NTD5P06V | ONSEMI |
获取价格 |
Power MOSFET 5 Amps, 60 Volts P−Channel DPAK |
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NTD5P06V-1 | ONSEMI |
获取价格 |
Power MOSFET 5 Amps, 60 Volts P−Channel DPAK |
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NTD5P06VT4 | ONSEMI |
获取价格 |
Power MOSFET 5 Amps, 60 Volts P−Channel DPAK |
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NTD60 | EDI |
获取价格 |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
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NTD600N80S3Z | ONSEMI |
获取价格 |
MOSFET – Power, N-Channel, SUPERFET® III, 800 |
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