5秒后页面跳转
NTD5865NL PDF预览

NTD5865NL

更新时间: 2024-01-15 20:05:52
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 265K
描述
N-Channel Power MOSFET 60 V, 40 A, 16 mΩ

NTD5865NL 数据手册

 浏览型号NTD5865NL的Datasheet PDF文件第2页浏览型号NTD5865NL的Datasheet PDF文件第3页浏览型号NTD5865NL的Datasheet PDF文件第4页浏览型号NTD5865NL的Datasheet PDF文件第5页浏览型号NTD5865NL的Datasheet PDF文件第6页浏览型号NTD5865NL的Datasheet PDF文件第7页 
NTD5865NL  
N--Channel Power MOSFET  
60 V, 40 A, 16 mΩ  
Features  
Low Gate Charge  
Fast Switching  
High Current Capability  
http://onsemi.com  
100% Avalanche Tested  
These Devices are Pb--Free, Halogen Free and are RoHS Compliant  
V
R
DS(on)  
MAX  
I MAX  
D
(BR)DSS  
16 mΩ @ 10 V  
19 mΩ @ 4.5 V  
MAXIMUM RATINGS (T = 25C unless otherwise noted)  
60 V  
40 A  
J
Parameter  
Drain--to--Source Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
D
Gate--to--Source Voltage -- Continuous  
Gate--to--Source Voltage  
V
20  
30  
V
GS  
GS  
V
V
-- Non--Repetitive (t < 10 ms)  
p
Continuous Drain  
T
= 25C  
= 100C  
= 25C  
I
40  
26  
52  
A
C
D
G
Current (R  
)
θ
JC  
Steady  
State  
T
C
Power Dissipation  
(R  
T
C
P
W
D
S
)
θ
JC  
N--CHANNEL MOSFET  
Pulsed Drain Current  
t = 10 ms  
p
I
137  
A
DM  
4
Operating Junction and Storage Temperature  
T , T  
-- 5 5 t o  
150  
C  
J
stg  
4
Source Current (Body Diode)  
I
40  
36  
A
mJ  
A
S
Single Pulse Drain--to--Source  
Avalanche Energy  
(L =  
0.1 mH)  
E
2
1
AS  
AS  
1
2
3
I
27  
3
DPAK  
Lead Temperature for Soldering Purposes  
T
260  
C  
IPAK  
L
CASE 369AA  
(Surface Mount)  
STYLE 2  
(1/8from case for 10 s)  
CASE 369D  
(Straight Lead)  
STYLE 2  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
MARKING DIAGRAMS  
& PIN ASSIGNMENT  
THERMAL RESISTANCE MAXIMUM RATINGS  
4
Parameter  
Symbol  
Value  
Unit  
Drain  
4
Drain  
Junction--to--Case (Drain)  
R
θ
JC  
2.4  
42  
C/W  
Junction--to--Ambient -- Steady State (Note 1)  
R
θ
JA  
1. Surface--mounted on FR4 board using 1 in sq pad size  
(Cu area = 1.127 in sq [2 oz] including traces.  
2
Drain  
1
3
Gate Source  
1
2
3
Gate Drain Source  
Y
WW  
= Year  
= Work Week  
5865NL = Device Code  
G
= Pb--Free Package  
ORDERING INFORMATION  
Seedetailedorderingandshippinginformationinthepackage  
dimensions section on page 2 of this data sheet.  
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
June, 2010 -- Rev. 1  
NTD5865NL/D  

与NTD5865NL相关器件

型号 品牌 获取价格 描述 数据表
NTD5865NL_14 ONSEMI

获取价格

N-Channel Power MOSFET
NTD5865NL-1G ONSEMI

获取价格

N-Channel Power MOSFET 60 V, 40 A, 16 mΩ
NTD5865NLT4G ONSEMI

获取价格

N-Channel Power MOSFET 60 V, 40 A, 16 mΩ
NTD5865NLT4G UMW

获取价格

种类:N-Channel;漏源电压(Vdss):60V;持续漏极电流(Id)(在25°C时
NTD5865NT4G ONSEMI

获取价格

N-Channel Power MOSFET 60 V, 38 A, 18 m
NTD5867NL ONSEMI

获取价格

N-Channel Power MOSFET 60 V, 20 A, 39 m
NTD5867NL-1G ONSEMI

获取价格

N-Channel Power MOSFET 60 V, 20 A, 39 m
NTD5867NLT4G ONSEMI

获取价格

N-Channel Power MOSFET 60 V, 20 A, 39 m
NTD5867NLT4G UMW

获取价格

种类:N-Channel;漏源电压(Vdss):60V;持续漏极电流(Id)(在25°C时
NTD5C434NT4G ONSEMI

获取价格

单 N 沟道,功率 MOSFET,40V,160A,2.1mΩ