Datasheet > NTD5P06V

NTD5P06V

更新时间： 2024-09-09 03:28:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	93K
描述
Power MOSFET 5 Amps, 60 Volts P−Channel DPAK

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中文翻译

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NTD5P06V 数据手册

MTD5P06V

Preferred Device

Power MOSFET

5 Amps, 60 Volts

P−Channel DPAK

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. Designed for low voltage, high

speed switching applications in power supplies, converters and power

motor controls, these devices are particularly well suited for bridge

circuits where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected voltage

transients.

http://onsemi.com

TYP

I MAX

(BR)DSS

DS(on)

60 V

340 mW

5.0 A

• Avalanche Energy Specified

P−Channel

• I

and V

Specified at Elevated Temperature

DSS

DS(on)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Vdc

Drain−to−Source Voltage

DSS

DGR

Drain−to−Gate Voltage (R = 1.0 MΩ)

Gate−to−Source Voltage

− Continuous

± 15

± 25

Vdc

Vpk

− Non−repetitive (t ≤ 10 ms)

GSM

MARKING DIAGRAMS

Drain Current − Continuous @ 25°C

Drain Current − Continuous @ 100°C

Adc

Drain

Drain Current − Single Pulse (t ≤ 10 µs)

Apk

Total Power Dissipation @ 25°C

Derate above 25°C

0.27

2.1

Watts

W/°C

Watts

DPAK

Total Power Dissipation @ T = 25°C

CASE 369C

(Note 2.)

Style 2

Gate

Operating and Storage Temperature Range T , T

−55 to

175

°C

stg

Drain

Source

Single Pulse Drain−to−Source Avalanche

Energy − Starting T = 25°C

125

Drain

(V = 25 Vdc, V = 10 Vdc, Peak

I = 5 Apk, L = 10 mH, R = 25 Ω)

Thermal Resistance

− Junction to Case

− Junction to Ambient (Note 1.)

− Junction to Ambient (Note 2.)

°C/W

°C

3.75

100

71.4

DPAK

CASE 369D

Style 2

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10

seconds

260

5P06V

Device Code

= Year

= Work Week

Gate Drain Source

1. When surface mounted to an FR4 board using the minimum

recommended pad size.

2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.

ORDERING INFORMATION

Device

Package

Shipping

NTD5P06V

DPAK

75 Units/Rail

DPAK

Straight Lead

NTD5P06V−1

NTD5P06VT4

DPAK

2500 Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

November, 2003 − Rev. 3

MTD5P06V/D

12 3 4 5 6 7 8

中文翻译

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与NTD5P06V相关器件

型号	品牌	获取价格	描述	数据表
NTD5P06V-1	ONSEMI	获取价格	Power MOSFET 5 Amps, 60 Volts P−Channel DPAK
NTD5P06VT4	ONSEMI	获取价格	Power MOSFET 5 Amps, 60 Volts P−Channel DPAK
NTD60	EDI	获取价格	HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
NTD600N80S3Z	ONSEMI	获取价格	MOSFET – Power, N-Channel, SUPERFET® III, 800
NTD60N02R	ONSEMI	获取价格	Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02R.1	ONSEMI	获取价格	Power MOSFET 62 A, 25 V, NâChannel, DPAK
NTD60N02R.1G	ONSEMI	获取价格	Power MOSFET 62 A, 25 V, NâChannel, DPAK
NTD60N02R.35	ONSEMI	获取价格	Power MOSFET 62 A, 25 V, NâChannel, DPAK
NTD60N02R.35G	ONSEMI	获取价格	Power MOSFET 62 A, 25 V, NâChannel, DPAK
NTD60N02R-001	ONSEMI	获取价格	Power MOSFET 62 A, 24 V, N−Channel, DPAK

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