Datasheet > NTD5C688NLT4G

NTD5C688NLT4G

更新时间： 2023-09-03 20:36:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	178K
描述
单 N 沟道，逻辑电平，功率 MOSFET，60V，17A，27.4mΩ

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NTD5C688NLT4G 数据手册

NTD5C688NL

Power MOSFET

60 V, 27.4 mW, 17 A, Single N−Channel

Features

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

www.onsemi.com

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

(BR)DSS

DS(on)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

27.4 mW @ 10 V

40 mW @ 4.5 V

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

60 V

17 A

DSS

Gate−to−Source Voltage

Continuous Drain Cur-

"20

= 25°C

= 100°C

= 25°C

rent R

(Notes 1 & 3)

Steady

State

Power Dissipation R

(Note 1)

= 100°C

9.1

7.5

5.3

3.4

1.7

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2 & 3)

Steady

State

N−CHANNEL MOSFET

Power Dissipation R

(Notes 1 & 2)

T = 25°C

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

T , T

−55 to

175

°C

stg

DPAK

CASE 369C

STYLE 2

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (I

= 1 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

MARKING DIAGRAM

& PIN ASSIGNMENT

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Drain

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

8.3

Unit

Junction−to−Case (Drain) (Note 1)

Junction−to−Ambient − Steady State (Note 2)

°C/W

Drain

Gate Source

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

= Assembly Location

= Year

= Work Week

5C688L = Device Code

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Publication Order Number:

May, 2018 − Rev. 2

NTD5C688NL/D

12 3 4 5 6 7

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与NTD5C688NLT4G相关器件

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NTD5N50	ONSEMI	获取价格	5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
NTD5N50	MOTOROLA	获取价格	5A, 500V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
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