NTD5865N
N-Channel Power MOSFET
60 V, 38 A, 18 mW
Features
• Low Gate Charge
• Fast Switching
http://onsemi.com
• High Current Capability
• 100% Avalanche Tested
V
R
MAX
I MAX
D
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
(BR)DSS
DS(on)
60 V
18 mW @ 10 V
38 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
D
V
DSS
Gate−to−Source Voltage − Continuous
V
"20
"30
V
GS
GS
Gate−to−Source Voltage
V
V
− Non−Repetitive (t < 10 ms)
p
G
Continuous Drain
T
= 25°C
= 100°C
= 25°C
I
38
24
52
A
C
D
Current (R
)
q
JC
Steady
State
T
C
S
N−CHANNEL MOSFET
Power Dissipation
(R
T
C
P
W
D
)
q
JC
4
Pulsed Drain Current
t = 10 ms
I
137
A
p
DM
4
Operating Junction and Storage Temperature
T , T
J
−55 to
150
°C
stg
2
1
Source Current (Body Diode)
I
38
36
A
mJ
A
S
1
2
3
Single Pulse Drain−to−Source
Avalanche Energy
L = 0.1 mH
E
3
AS
AS
DPAK
IPAK
CASE 369C
(Surface Mount)
STYLE 2
I
27
CASE 369D
(Straight Lead)
STYLE 2
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
THERMAL RESISTANCE MAXIMUM RATINGS
Drain
Parameter
Symbol
Value
Unit
Junction−to−Case (Drain)
R
2.4
42
°C/W
q
JC
Junction−to−Ambient − Steady State (Note 1)
R
q
JA
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces.
2
Drain
1
3
Gate Source
1
2
3
Gate Drain Source
Y
WW
= Year
= Work Week
5865N = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
May, 2010 − Rev. 0
NTD5865N/D