Datasheet > NTD5805N_12

NTD5805N_12

更新时间： 2024-11-18 12:22:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	143K
描述
Power MOSFET 40 V, 51 A, Single N.Channel, DPAK

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中文翻译

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数据手册

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NTD5805N_12 数据手册

NTD5805N, NVD5805N

Power MOSFET

40 V, 51 A, Single N−Channel, DPAK

Features

• Low R

DS(on)

• High Current Capability

http://onsemi.com

• Avalanche Energy Specified

• NVD Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAX

I MAX

(BR)DSS

DS(on)

16 mW @ 5.0 V

9.5 mW @ 10 V

40 V

51 A

Applications

• LED Backlight Driver

• CCFL Backlight

• DC Motor Control

• Power Supply Secondary Side Synchronous Rectification

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

N−CHANNEL MOSFET

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage − Continuous

"20

"30

Gate−to−Source Voltage

− Non−Repetitive (t < 10 mS)

Continuous Drain

= 25°C

= 100°C

= 25°C

Current (R

(Note 1)

)

CASE 369C

DPAK

(Surface Mount)

STYLE 2

Steady

State

Power Dissipation

(R ) (Note 1)

Pulsed Drain Current

t = 10 ms

MARKING DIAGRAM

& PIN ASSIGNMENT

Operating Junction and Storage Temperature

T , T

−55 to

175

°C

stg

Source Current (Body Diode)

Drain

Single Pulse Drain−to−Source Avalanche

Energy (V = 50 V, V = 10 V, R = 25 W,

= 40 A, L = 0.1 mH, V = 40 V)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

Drain

Gate Source

THERMAL RESISTANCE MAXIMUM RATINGS

= Year

= Work Week

Parameter

Symbol

Value

Unit

5805N = Device Code

= Pb−Free Package

Junction−to−Case (Drain)

3.2

°C/W

Junction−to−Ambient − Steady State (Note 1)

107

1. Surface−mounted on FR4 board using the minimum recommended pad size.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Publication Order Number:

April, 2012 − Rev. 4

NTD5805N/D

12 3 4 5 6

中文翻译

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与NTD5805N_12相关器件

型号	品牌	获取价格	描述	数据表
NTD5805NG	ONSEMI	获取价格	Power MOSFET 40 V, 51 A, Single N−Channel, DPAK
NTD5805NT4G	ONSEMI	获取价格	Power MOSFET 40 V, 51 A, Single N−Channel, DPAK
NTD5806N	ONSEMI	获取价格	Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK
NTD5806NG	ONSEMI	获取价格	Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK
NTD5806NT4G	ONSEMI	获取价格	Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK
NTD5807N	ONSEMI	获取价格	Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK
NTD5807NG	ONSEMI	获取价格	Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK
NTD5807NT4G	ONSEMI	获取价格	Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK
NTD5862N	ONSEMI	获取价格	N-Channel Power MOSFET
NTD5862N-1G	ONSEMI	获取价格	N-Channel Power MOSFET

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