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NTD5804NT4G

更新时间： 2024-11-18 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 128K
描述
Power MOSFET 40 V, 69 A, Single N−Channel, DPAK

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NTD5804NT4G 数据手册

 浏览型号NTD5804NT4G的Datasheet PDF文件第2页浏览型号NTD5804NT4G的Datasheet PDF文件第3页浏览型号NTD5804NT4G的Datasheet PDF文件第4页浏览型号NTD5804NT4G的Datasheet PDF文件第5页浏览型号NTD5804NT4G的Datasheet PDF文件第6页 
NTD5804N  
Power MOSFET  
40 V, 69 A, Single N−Channel, DPAK  
Features  
• Low R  
DS(on)  
• High Current Capability  
• Avalanche Energy Specified  
• These are Pb−Free Devices  
http://onsemi.com  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
Applications  
12 mW @ 5.0 V  
8.5 mW @ 10 V  
40 V  
69 A  
• CCFL Backlight  
• DC Motor Control  
• Class D Amplifier  
D
• Power Supply Secondary Side Synchronous Rectification  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
G
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
S
Gate−to−Source Voltage − Continuous  
V
"20  
"30  
V
GS  
GS  
N−CHANNEL MOSFET  
Gate−to−Source Voltage  
V
V
4
− Non−Repetitive (t < 10 mS)  
p
4
Continuous Drain  
T
= 25°C  
= 100°C  
= 25°C  
I
69  
49  
71  
A
C
D
Current (R  
(Note 1)  
)
q
JC  
Steady  
State  
T
C
2
1
3
1
Power Dissipation  
(R ) (Note 1)  
T
C
P
W
D
2
3
q
JC  
DPAK  
DPAK  
CASE 369C  
(Surface Mount)  
STYLE 2  
Pulsed Drain Current  
t = 10 ms  
I
125  
A
p
DM  
CASE 369D  
(Straight Lead)  
STYLE 2  
Operating Junction and Storage Temperature  
T , T  
J
−55 to  
175  
°C  
stg  
Source Current (Body Diode)  
I
30  
A
S
MARKING DIAGRAMS  
& PIN ASSIGNMENT  
Single Pulse Drain−to−Source Avalanche  
E
AS  
195  
mJ  
Energy (V = 50 V, V = 10 V, R = 25 W,  
DD  
GS  
G
4
I
= 36 A, L = 0.3 mH, V = 40 V)  
L(pk)  
DS  
Drain  
4
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
Drain  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
2
THERMAL RESISTANCE MAXIMUM RATINGS  
Drain  
1
3
Gate Source  
Parameter  
Symbol  
Value  
Unit  
1
2
3
Gate Drain Source  
Junction−to−Case (Drain)  
R
2.1  
°C/W  
q
JC  
Y
WW  
= Year  
= Work Week  
Junction−to−Ambient − Steady State (Note 1)  
R
106  
q
JA  
1. Surface−mounted on FR4 board using 1 in sq pad size  
5804N = Device Code  
G
(Cu area = 1.127 in sq [1 oz] including traces.  
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
March, 2009 − Rev. 0  
NTD5804N/D  
 
123456

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