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NTD5414N PDF预览

NTD5414N

更新时间: 2024-11-18 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 104K
描述
Power MOSFET 24 Amps, 60 Volts Single N−Channel DPAK

NTD5414N 数据手册

 浏览型号NTD5414N的Datasheet PDF文件第2页浏览型号NTD5414N的Datasheet PDF文件第3页浏览型号NTD5414N的Datasheet PDF文件第4页浏览型号NTD5414N的Datasheet PDF文件第5页浏览型号NTD5414N的Datasheet PDF文件第6页 
NTD5414N  
Power MOSFET  
24 Amps, 60 Volts Single NChannel  
DPAK  
Features  
Low R  
DS(on)  
http://onsemi.com  
High Current Capability  
Avalanche Energy Specified  
These are PbFree Devices  
I
D
MAX  
V
R
MAX  
DS(ON)  
(Note 1)  
(BR)DSS  
Applications  
60 V  
37 mW @ 10 V  
24 A  
LED Lighting and LED Backlight Drivers  
DCDC Converters  
NChannel  
DC Motor Drivers  
D
Power Supplies Secondary Side Synchronous Rectification  
MAXIMUM RATINGS (T = 25°C Unless otherwise specified)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
60  
Unit  
V
G
V
DSS  
GatetoSource Voltage Continuous  
V
$20  
$30  
V
GS  
GS  
S
GatetoSource Voltage Nonrepetitive  
(T < 10 ms)  
P
V
V
Continuous Drain  
Current R  
Steady  
State  
T
= 25°C  
= 100°C  
= 25°C  
I
24  
16  
55  
A
C
D
MARKING  
DIAGRAMS  
q
JC  
T
C
(Note 1)  
4
Power Dissipation  
Steady  
State  
T
C
P
W
D
Drain  
R
(Note 1)  
q
JC  
4
Pulsed Drain Current  
t = 10 ms  
p
I
75  
A
DM  
DPAK  
CASE 369AA  
STYLE 2  
Operating and Storage Temperature Range  
T , T  
55 to  
°C  
J
stg  
2
1
+175  
3
Source Current (Body Diode)  
I
S
24  
A
2
1
Gate  
3
Single Pulse DraintoSource Avalanche  
E
AS  
86.4  
mJ  
Drain  
Source  
Energy Starting T = 25°C  
J
(V = 50 V , V = 10 V, I = 24 A,  
L(pk)  
DD  
dc  
GS  
L = 0.3 mH, R = 25 W)  
G
5414N = Device Code  
Y
WW  
G
= Year  
= Work Week  
= PbFree Device  
Lead Temperature for Soldering  
Purposes, 1/8from Case for 10 Seconds  
T
L
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Max  
2.7  
Unit  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
JunctiontoCase (Drain) Steady State  
(Note 1)  
°C/W  
R
q
JC  
R
58.6  
q
JA  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface mounted on FR4 board using 1 sq in pad size,  
(Cu Area 1.127 sq in [1 oz] including traces).  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
October, 2008 Rev. 0  
NTD5414N/D  
 

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