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NTD5413N

更新时间： 2024-11-05 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 104K
描述
Power MOSFET 30 Amps, 60 Volts Single N−Channel DPAK

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NTD5413N 数据手册

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NTD5413N  
Power MOSFET  
30 Amps, 60 Volts Single N−Channel  
DPAK  
Features  
• Low R  
DS(on)  
http://onsemi.com  
• High Current Capability  
• Avalanche Energy Specified  
• These are Pb−Free Devices  
I
D
MAX  
V
R
MAX  
DS(ON)  
(Note 1)  
(BR)DSS  
Applications  
60 V  
26 mW @ 10 V  
30 A  
• LED Lighting and LED Backlight Drivers  
• DC−DC Converters  
• DC Motor Drivers  
• Switch Mode Power Supplies  
• Power Supplies Secondary Side Synchronous Rectification  
N−Channel  
D
MAXIMUM RATINGS (T = 25°C Unless otherwise specified)  
J
G
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
S
Gate−to−Source Voltage − Continuous  
Gate−to−Source Voltage − Nonrepetitive  
V
$20  
$30  
V
GS  
V
GS  
V
(T < 10 ms)  
P
MARKING  
DIAGRAM  
Continuous Drain  
Current R  
Steady  
State  
T
= 25°C  
= 100°C  
= 25°C  
I
30  
23  
68  
A
C
D
q
JC  
4
T
C
(Note 1)  
Drain  
Power Dissipation  
Steady  
State  
T
C
P
W
D
4
R
(Note 1)  
q
JC  
DPAK  
CASE 369AA  
STYLE 2  
Pulsed Drain Current  
t = 10 ms  
I
84  
A
p
DM  
2
1
Operating and Storage Temperature Range  
T , T  
J
−55 to  
+175  
°C  
stg  
3
2
1
Gate  
3
Source Current (Body Diode)  
I
30  
A
S
Drain  
Source  
Single Pulse Drain−to−Source Avalanche  
E
AS  
135  
mJ  
Energy − Starting T = 25°C  
J
(V = 50 V , V = 10 V, I = 30 A,  
L(pk)  
DD  
dc  
GS  
5413N = Device Code  
L = 0.3 mH, R = 25 W)  
G
Y
= Year  
Lead Temperature for Soldering  
Purposes, 1/8″ from Case for 10 Seconds  
T
L
260  
°C  
WW  
G
= Work Week  
= Pb−Free Device  
THERMAL RESISTANCE RATINGS  
Parameter  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Symbol  
Max  
2.2  
Unit  
Junction−to−Case (Drain) Steady State  
(Note 1)  
°C/W  
R
q
JC  
R
58.5  
q
JA  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface mounted on FR4 board using 1 sq in pad size,  
(Cu Area 1.127 sq in [1 oz] including traces).  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
October, 2008 − Rev. 0  
NTD5413N/D  
 
123456

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