Datasheet > NTD5407NT4G

NTD5407NT4G

更新时间： 2024-09-15 06:00:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	68K
描述
Power MOSFET 40 V, 38 A, Single N−Channel, DPAK

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中文翻译

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数据手册
替代型号

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NTD5407NT4G 数据手册

NTD5407N

Power MOSFET

40 V, 38 A, Single N−Channel, DPAK

Features

• Low R

DS(on)

• High Current Capability

• Low Gate Charge

http://onsemi.com

• These are Pb−Free Devices

MAX

TYP

DS(ON)

(Note 1)

(BR)DSS

Applications

40 V

21 mΩ @ 10 V

38 A

• Electronic Brake Systems

• Electronic Power Steering

• Bridge Circuits

N−Channel

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol

Value Units

DSS

Gate−to−Source Voltage

Continuous Drain

= 25°C

Steady

State

Current −R

(Note 1)

ꢀ

= 100°C

Power Dissipation −

(Note 1)

Steady

State

= 25°C

MARKING

DIAGRAM

ꢀ

Pulsed Drain Current

t = 10 ꢁ s

Operating Junction and Storage Temperature

T ,

−55 to

175

°C

STG

YWW

07NG

Source Current (Body Diode)

DPAK

CASE 369C

STYLE 2

Single Pulse Drain−to Source Avalanche

EAS

150

Energy − (V = 50 V, V = 10 V, I = 17 A,

L = 1 mH, R = 25 ꢂ)

= Year

= Work Week

= Specific Device Code

= Pb−Free Device

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

5407N

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

ORDERING INFORMATION

THERMAL RESISTANCE RATINGS (Note 1)

Device

Package

Shipping†

Parameter

Junction−to−Case (Drain)

Symbol

Max

Units

NTD5407NG

DPAK

(Pb−Free)

75 Units / Rail

2.0

°C/W

NTD5407NT4G

DPAK

(Pb−Free)

2500 / Tape & Reel

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

October, 2005 − Rev. 0

NTD5407N/D

12 3 4 5 6

中文翻译

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NTD5407NT4G 替代型号

型号	品牌	替代类型	描述	数据表
NVD5805NT4G	ONSEMI	类似代替	Power MOSFET 40 V, 51 A, Single N.Channel, DPAK
NTD5805NT4G	ONSEMI	类似代替	Power MOSFET 40 V, 51 A, Single N−Channel, DPAK
NTD5406NT4G	ONSEMI	类似代替	Power MOSFET 40 V, 70 A, Single N−Channel, DPAK

与NTD5407NT4G相关器件

型号	品牌	获取价格	描述	数据表
NTD5413N	ONSEMI	获取价格	Power MOSFET 30 Amps, 60 Volts Single N−Channel DPAK
NTD5413NT4G	ONSEMI	获取价格	Power MOSFET 30 Amps, 60 Volts Single N−Channel DPAK
NTD5414N	ONSEMI	获取价格	Power MOSFET 24 Amps, 60 Volts Single N−Channel DPAK
NTD5414NT4G	ONSEMI	获取价格	Power MOSFET 24 Amps, 60 Volts Single N−Channel DPAK
NTD560	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 5A I(C) \| TO-220
NTD565	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 400V V(BR)CEO \| 8A I(C) \| TO-3
NTD568	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 7A I(C) \| TO-220AB
NTD569	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 7A I(C) \| TO-220AB
NTD5802N	ONSEMI	获取价格	Power MOSFET 40 V, Single N−Channel, 101 A DPAK
NTD5802NT4G	ONSEMI	获取价格	Power MOSFET 40 V, Single NâChannel, 101 A

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