Datasheet > MMRF1009HR5

MMRF1009HR5

更新时间： 2024-11-07 01:12:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	829K
描述
RF Power Field Effect Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMRF1009HR5 数据手册

Document Number: MMRF1009H

Rev. 0, 1/2014

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MMRF1009HR5

MMRF1009HSR5

RF power transistors designed for applications operating at frequencies

from 900 to 1215 MHz. These devices are suitable for use in defense and

commercial pulse applications, such as IFF and DME.



Typical Pulse Performance: V_DD= 50 Vdc, I_DQ= 200 mA,

Pulse Width = 128 sec, Duty Cycle = 10%

(W)



960--1215 MHz, 500 W, 50 V

PULSE

LATERAL N--CHANNEL

RF POWER MOSFETs

out

Application

(MHz)

(dB)

19.7

18.5

(%)

62.0

57.0

Narrowband

Broadband

500 Peak

1030

960--1215



Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 W Peak Power

Features



Characterized with Series Equivalent Large--Signal Impedance Parameters

Internally Matched for Ease of Use

Qualified Up to a Maximum of 50 V_DDOperation

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

NI--780H--2L

MMRF1009HR5



In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

NI--780S--2L

MMRF1009HSR5

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +110

--6.0, +10

-- 65 to +150

150

Unit

Vdc

C

Drain--Source Voltage

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

C

(1)

225

C

Table 2. Thermal Characteristics

(2)

Characteristic

Symbol

Value

Unit

Thermal Impedance, Junction to Case

Case Temperature 80C, 500 W Pulse, 128 sec Pulse Width, 10% Duty Cycle



0.044

C/W

1. Continuous use at maximum temperature will affect MTTF.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMRF1009HR5 MMRF1009HSR5

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...15

中文翻译

下载PDF

与MMRF1009HR5相关器件

型号	品牌	获取价格	描述	数据表
MMRF1009HSR5	NXP	获取价格	RF Power Field Effect Transistors
MMRF1011H	NXP	获取价格	RF Power LDMOS Transistors
MMRF1011HR5	NXP	获取价格	RF Power LDMOS Transistors
MMRF1011HSR5	NXP	获取价格	RF Power LDMOS Transistors
MMRF1013H	NXP	获取价格	RF Power LDMOS Transistors
MMRF1013HR5	NXP	获取价格	RF Power LDMOS Transistors
MMRF1013HSR5	NXP	获取价格	RF Power LDMOS Transistors
MMRF1014N	NXP	获取价格	RF Power LDMOS Transistor
MMRF1014NT1	NXP	获取价格	RF Power LDMOS Transistor
MMRF1015GNR1	NXP	获取价格	RF Power LDMOS Transistors