Document Number: MMRF1009H
Rev. 0, 1/2014
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MMRF1009HR5
MMRF1009HSR5
RF power transistors designed for applications operating at frequencies
from 900 to 1215 MHz. These devices are suitable for use in defense and
commercial pulse applications, such as IFF and DME.
Typical Pulse Performance: VDD = 50 Vdc, IDQ = 200 mA,
Pulse Width = 128 sec, Duty Cycle = 10%
P
(W)
f
G
960--1215 MHz, 500 W, 50 V
PULSE
LATERAL N--CHANNEL
RF POWER MOSFETs
out
ps
D
Application
(MHz)
(dB)
19.7
18.5
(%)
62.0
57.0
Narrowband
Broadband
500 Peak
500 Peak
1030
960--1215
Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 W Peak Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
NI--780H--2L
MMRF1009HR5
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
NI--780S--2L
MMRF1009HSR5
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
Unit
Vdc
Vdc
C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
C
(1)
T
J
225
C
Table 2. Thermal Characteristics
(2)
Characteristic
Symbol
Value
Unit
Thermal Impedance, Junction to Case
Case Temperature 80C, 500 W Pulse, 128 sec Pulse Width, 10% Duty Cycle
Z
0.044
C/W
JC
1. Continuous use at maximum temperature will affect MTTF.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2014. All rights reserved.
MMRF1009HR5 MMRF1009HSR5
RF Device Data
Freescale Semiconductor, Inc.
1