Datasheet > MMRF1020-04N

MMRF1020-04N

更新时间： 2024-11-22 01:23:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
20页	505K
描述
RF Power LDMOS Transistors

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数据手册

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MMRF1020-04N 数据手册

Document Number: MMRF1020--04N

Rev. 0, 2/2014

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

MMRF1020--04NR3

MMRF1020--04GNR3

N--Channel Enhancement--Mode Lateral MOSFETs

These 100 W symmetrical Doherty RF power LDMOS transistors are

designed for cellular base station applications covering the frequency range

of 720 to 960 MHz. The transistors are also suitable for wideband power

amplifier applications from 600 to 1000 MHz and saturated power levels up to

500 watts.

720–960 MHz, 100 W AVG., 48 V

RF POWER LDMOS



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 48 Vdc,

_DQA= 860 mA, V_GSB= 0.9 Vdc, P_out= 100 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.

TRANSISTORS



Output PAR

(dB)

ACPR

(dBc)

Frequency

920 MHz

940 MHz

960 MHz

(dB)

19.5

19.2

(%)

48.5

49.5

48.0

7.2

7.1

7.0

–29.2

–32.0

–35.7

OM--780--4L

PLASTIC

MMRF1020--04NR3

Features



Production Tested in a Symmetrical Doherty Configuration

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

OM--780G--4L

PLASTIC

MMRF1020--04GNR3



Designed for Digital Predistortion Error Correction Systems

In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.

Carrier

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

Peaking

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistors.

Figure 1. Pin Connections

MMRF1020--04NR3 MMRF1020--04GNR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...20

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