Document Number: MMRF1305H
Rev. 0, 12/2013
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel
MMRF1305HR5
MMRF1305HSR5
Enhancement--Mode Lateral MOSFETs
RF power transistors suitable for both narrowband and broadband CW or
pulse applications operating at frequencies from 1.8 to 2000 MHz, such as
military and radio communications and radar. These devices are fabricated
using Freescale’s enhanced ruggedness platform and are suitable for use in
applications where high VSWRs are encountered.
1.8--2000 MHz, 100 W, 50 V
BROADBAND
Typical Performance: V = 50 Vdc
RF POWER LDMOS TRANSISTORS
DD
P
(W)
Frequency
(MHz)
G
(dB)
(%)
IMD
(dBc)
out
ps
D
Signal Type
(1,3)
30--512
Two--Tone
100 PEP
19.0
30.0
-- 3 0
(100 kHz spacing)
(2)
512
CW
100
27.2
26.0
70.0
70.0
—
—
(2)
512
Pulse (200 sec, 20%
100 Peak
NI--780H--4L
MMRF1305HR5
Duty Cycle)
Load Mismatch/Ruggedness
Frequency
P
(W)
Test
Voltage
out
Signal Type
VSWR
>65:1
(MHz)
Result
(2)
512
Pulse
130
50
No Device
(100 sec, 20% at all Phase
(3 dB
Overdrive)
Degradation
NI--780S--4L
MMRF1305HSR5
Duty Cycle)
Angles
(2)
512
CW
126
(3 dB
Overdrive)
1. Measured in 30--512 MHz broadband reference circuit.
2. Measured in 512 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the
indicated frequency range.
Gate A
Gate B
Drain A
Drain B
Features
Wide Operating Frequency Range
Extremely Rugged
Unmatched, Capable of Very Broadband Operation
Integrated Stability Enhancements
Low Thermal Resistance
(Top View)
Note: The backside of the package is the
source terminal for the transistors.
Integrated ESD Protection Circuitry
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
C
Drain--Source Voltage
V
--0.5, +133
--6.0, +10
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
--65 to +150
--40 to +150
--40 to +225
T
C
C
(4)
T
J
C
4. Continuous use at maximum temperature will affect MTTF.
Freescale Semiconductor, Inc., 2013. All rights reserved.
MMRF1305HR5 MMRF1305HSR5
RF Device Data
Freescale Semiconductor, Inc.
1