Datasheet > MMRF1305HS

MMRF1305HS

更新时间： 2024-11-07 14:59:31

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
20页	1019K
描述
Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V

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数据手册

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MMRF1305HS 数据手册

Document Number: MMRF1305H

Rev. 0, 12/2013

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

High Ruggedness N--Channel

MMRF1305HR5

MMRF1305HSR5

Enhancement--Mode Lateral MOSFETs

RF power transistors suitable for both narrowband and broadband CW or

pulse applications operating at frequencies from 1.8 to 2000 MHz, such as

military and radio communications and radar. These devices are fabricated

using Freescale’s enhanced ruggedness platform and are suitable for use in

applications where high VSWRs are encountered.

1.8--2000 MHz, 100 W, 50 V

BROADBAND

Typical Performance: V = 50 Vdc

RF POWER LDMOS TRANSISTORS

(W)

Frequency

(MHz)

(dB)



(%)

IMD

(dBc)

out

Signal Type

(1,3)

30--512

Two--Tone

100 PEP

19.0

30.0

-- 3 0

(100 kHz spacing)

(2)

512

100

27.2

26.0

70.0

—

(2)

512

Pulse (200 sec, 20%

100 Peak

NI--780H--4L

MMRF1305HR5

Duty Cycle)

Load Mismatch/Ruggedness

Frequency

(W)

Test

Voltage

out

Signal Type

VSWR

>65:1

(MHz)

Result

(2)

512

Pulse

130

No Device

(100 sec, 20% at all Phase

(3 dB

Overdrive)

Degradation

NI--780S--4L

MMRF1305HSR5

Duty Cycle)

Angles

(2)

512

126

(3 dB

Overdrive)

1. Measured in 30--512 MHz broadband reference circuit.

2. Measured in 512 MHz narrowband test circuit.

3. The values shown are the minimum measured performance numbers across the

indicated frequency range.

Gate A

Gate B

Drain A

Drain B

Features



Wide Operating Frequency Range

Extremely Rugged

Unmatched, Capable of Very Broadband Operation

Integrated Stability Enhancements

Low Thermal Resistance

(Top View)

Note: The backside of the package is the

source terminal for the transistors.

Integrated ESD Protection Circuitry

In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

C

Drain--Source Voltage

--0.5, +133

--6.0, +10

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

--65 to +150

--40 to +150

--40 to +225

C

(4)

C

4. Continuous use at maximum temperature will affect MTTF.

MMRF1305HR5 MMRF1305HSR5

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...20

中文翻译

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与MMRF1305HS相关器件

型号	品牌	获取价格	描述	数据表
MMRF1305HSR5	NXP	获取价格	RF Power LDMOS Transistors
MMRF1306H	NXP	获取价格	RF Power LDMOS Transistors
MMRF1306HR5	NXP	获取价格	Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V
MMRF1306HSR5	NXP	获取价格	RF Power LDMOS Transistors
MMRF1308H	NXP	获取价格	RF Power LDMOS Transistors
MMRF1308HR5	NXP	获取价格	RF Power LDMOS Transistors
MMRF1308HSR5	NXP	获取价格	RF Power LDMOS Transistors
MMRF1310H	NXP	获取价格	Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
MMRF1310HR5	NXP	获取价格	Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
MMRF1310HS	NXP	获取价格	Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V

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