Datasheet > MMRF1304GNR1

MMRF1304GNR1

更新时间： 2024-11-02 15:43:39

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	463K
描述
Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V

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MMRF1304GNR1 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Transferred	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.75
风险等级：	5.69	JESD-609代码：	e3
湿度敏感等级：	3	峰值回流温度（摄氏度）：	260
端子面层：	MATTE TIN	处于峰值回流温度下的最长时间：	40
Base Number Matches：	1

MMRF1304GNR1 数据手册

Document Number: MMRF1304N

Rev. 0, 12/2013

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

High Ruggedness N--Channel

MMRF1304NR1

Enhancement--Mode Lateral MOSFETs

MMRF1304GNR1

RF power transistors suitable for both narrowband and broadband CW or

pulse applications operating at frequencies from 1.8 to 2000 MHz, such as

military radio communications and radar. These devices are fabricated using

Freescale’s enhanced ruggedness platform and are suitable for use in

applications where high VSWRs are encountered.

1.8--2000 MHz, 25 W, 50 V

WIDEBAND

RF POWER LDMOS TRANSISTORS

Typical Performance: V = 50 Vdc

(1)

(W)

Frequency

(MHz)

(dB)



(%)

IMD

out

Signal Type

(dBc)

(2,6)

1.8 to 30

Two--Tone

(10 kHz spacing)

25 PEP

-- 3 0

-- 3 2

—

(3,6)

30--512

Two--Tone

(200 kHz spacing)

25 PEP

25 Peak

17.1

25.4

30.1

74.5

T O -- 2 7 0 -- 2

PLASTIC

MMRF1304NR1

(4)

512

Pulse (100 sec,

20% Duty Cycle)

(4)

512

25.5

22.5

74.7

—

(5)

1030

Load Mismatch/Ruggedness

Frequency

(W)

Test

Voltage

TO--270G--2

PLASTIC

MMRF1304GNR1

Signal Type

VSWR

(MHz)

Result

(2)

>65:1

No Device

Degradation

0.23

(3 dB

Overdrive)

at all Phase

Angles

(3)

512

1.6

(3 dB

Overdrive)

(4)

512

Pulse

(100 sec, 20%

Duty Cycle)

0.14 Peak

(3 dB

Overdrive)

Gate

Drain

(4)

512

0.14

(3 dB

Overdrive

(Top View)

(5)

1030

0.34

(3 dB

Note: The backside of the package is the

source terminal for the transistor.

Overdrive

1. Distortion products are referenced to one of two tones.

2. Measured in 1.8--30 MHz broadband reference circuit.

3. Measured in 30--512 MHz broadband reference circuit.

4. Measured in 512 MHz narrowband test circuit.

Figure 1. Pin Connections

5. Measured in 1030 MHz narrowband test circuit.

6. The values shown are the minimum measured performance numbers across the

indicated frequency range.

Features



Wide Operating Frequency Range

Extreme Ruggedness

Unmatched, Capable of Very Broadband Operation

Integrated Stability Enhancements

Low Thermal Resistance

Extended ESD Protection Circuit

In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.

MMRF1304NR1 MMRF1304GNR1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...16

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与MMRF1304GNR1相关器件

型号	品牌	获取价格	描述	数据表
MMRF1304LR5	NXP	获取价格	Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V
MMRF1304N	NXP	获取价格	Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V
MMRF1304NR1	NXP	获取价格	Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V
MMRF1305H	NXP	获取价格	RF Power LDMOS Transistors
MMRF1305HR5	NXP	获取价格	RF Power LDMOS Transistors
MMRF1305HS	NXP	获取价格	Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V
MMRF1305HSR5	NXP	获取价格	RF Power LDMOS Transistors
MMRF1306H	NXP	获取价格	RF Power LDMOS Transistors
MMRF1306HR5	NXP	获取价格	Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V
MMRF1306HSR5	NXP	获取价格	RF Power LDMOS Transistors

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