Datasheet > MMRF1317H

MMRF1317H

更新时间： 2024-11-03 17:00:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
17页	846K
描述
RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMRF1317H 数据手册

Document Number: MMRF1317H

Rev. 0, 3/2016

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

MMRF1317H

MMRF1317HS

These 1300 W RF power transistors are designed for applications operating

at frequencies between 1020 and 1100 MHz. These devices are suitable for use

in defense and commercial pulse applications, such as IFF and secondary

surveillance radars.

1030–1090 MHz, 1300 W PEAK, 50 V

RF POWER LDMOS TRANSISTORS

Typical Performance: In 1030, 1090 MHz reference circuit, V = 50 Vdc,

= 100 mA

DQ(A+B)

(W)

Frequency

(MHz)



out

Signal Type

(dB)

18.9

18.8

(%)

56.0

57.9

(1)

1030

1090

Pulse

1300 Peak

1100 Peak

(128 sec, 10% Duty Cycle)

(1)

NI--1230H--4S

MMRF1317H

Typical Narrowband Performance: V = 50 Vdc, I

= 100 mA

DQ(A+B)

(W)

Frequency

(MHz)

(dB)



(%)

out

Signal Type

(2)

1030

Pulse

1300 Peak

18.2

58.1

(128 sec, 10% Duty Cycle)

Load Mismatch/Ruggedness

Frequency

NI--1230S--4S

MMRF1317HS

(W)

Test

Voltage

Signal Type

(MHz)

VSWR

Result

(2)

1030

Pulse

(128 sec, 10%

Duty Cycle)

> 10:1

at all Phase

Angles

(3 dB

Overdrive)

No Device

Degradation

Gate A

Gate B

Drain A

Drain B

1. Measured in 1030, 1090 MHz reference circuit.

2. Measured in 1030 MHz narrowband test circuit.

Features



Internally input and output matched for broadband operation and ease of use

Device can be used single--ended, push--pull, or in a quadrature

configuration

(Top View)

Note: The backside of the package is the

source terminal for the transistor.



High ruggedness, handles > 10:1 VSWR

Integrated ESD protection with greater negative voltage range for

improved Class C operation and gate voltage pulsing

Figure 1. Pin Connections



Characterized with series equivalent large--signal impedance parameters

Applications



Ground--based secondary surveillance radars

IFF transponders

MMRF1317H MMRF1317HS

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...17

中文翻译

下载PDF

与MMRF1317H相关器件

型号	品牌	获取价格	描述	数据表
MMRF1317HS	NXP	获取价格	RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V
MMRF1318N	NXP	获取价格	RF Power LDMOS Transistor
MMRF1318NR1	NXP	获取价格	RF Power LDMOS Transistor
MMRF1320GN	NXP	获取价格	RF Power LDMOS Transistors
MMRF1320N	NXP	获取价格	RF Power LDMOS Transistors
MMRF2004NBR1	NXP	获取价格	WiMax RF LDMOS Wideband Integrated Power Amplifier, 2500-2700 MHz, 4 W Avg., 28 V
MMRF2005GN	NXP	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MMRF2005N	NXP	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MMRF2006N	NXP	获取价格	RF LDMOS Wideband Integrated Power Amplifier
MMRF2006NT1	NXP	获取价格	RF LDMOS Wideband Integrated Power Amplifier